FSS230D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FSS230D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia entre drenaje y fuente RDS(on): 0.44 Ohm
Paquete / Cubierta: TO257AA
Búsqueda de reemplazo de MOSFET FSS230D
FSS230D Datasheet (PDF)
fss230.pdf
FSS230D, FSS230R8A, 200V, 0.440 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
fss239.pdf
Ordering number : ENN6582FSS239N-Channel Silicon MOSFETFSS239Load Switching ApplicationsFeaturesPackage Dimensions Low ON resistance.unit : mm 2.5V drive.2185[FSS239]851 : No Contact2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum Ratings at Ta=25CPar
fss238.pdf
Ordering number:ENN6401N-Channel Silicon MOSFETFSS238Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2116[FSS238]8 51 : Source2 : Source14 3 : Source0.25.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Con
fss234.pdf
Ordering number : ENN6865FSS234N-Channel Silicon MOSFETFSS234DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4.0V drive. 2116 Ultrahigh-speed switching.[FSS234]851 : Source2 : Source3 : Source140.2 4 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim
fss237.pdf
Ordering number:ENN6149N-Channel Silicon MOSFETFSS237Load Switching ApplicationsFeatures Package Dimensions Ultralow ON resistance.unit:mm 2.5V drive.2116[FSS237]8 51 : Source2 : Source14 3 : Source0.25.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta = 25CParameter Sym
fss232.pdf
Ordering number:ENN6359N-Channel Silicon MOSFETFSS232Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2116[FSS232]8 51 : Source2 : Source140.23 : Source5.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co
fss23ao.pdf
FSS23AOD,S E M I C O N D U C T O RFSS23AORRadiation Hardened, SEGR ResistantFebruary 1998 N-Channel Power MOSFETsFeatures Description 9A, 200V, rDS(ON) = 0.330 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOSFET
fss23a4.pdf
FSS23A4D,FSS23A4R7A, 250V, 0.460 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 7A, 250V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Si
fss234.pdf
FSS234D, FSS234R6A, 250V, 0.600 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 6A, 250V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specifi- Total Dosecally designed for commercial and military space applications.- Meets Pre-RAD Specifications to 100K R
Otros transistores... FSL9230D , FSL9230R , FSL923AOD , FSL923AOR , FSS130D , FSS130R , FSS13AOD , FSS13AOR , IRFP260 , FSS230R , FSS234D , FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D .
