FSS230D Todos los transistores

 

FSS230D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FSS230D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm
   Paquete / Cubierta: TO257AA

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FSS230D Datasheet (PDF)

 8.1. Size:46K  intersil
fss230.pdf

FSS230D
FSS230D

FSS230D, FSS230R8A, 200V, 0.440 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

 9.1. Size:28K  sanyo
fss239.pdf

FSS230D
FSS230D

Ordering number : ENN6582FSS239N-Channel Silicon MOSFETFSS239Load Switching ApplicationsFeaturesPackage Dimensions Low ON resistance.unit : mm 2.5V drive.2185[FSS239]851 : No Contact2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum Ratings at Ta=25CPar

 9.2. Size:72K  sanyo
fss238.pdf

FSS230D
FSS230D

Ordering number:ENN6401N-Channel Silicon MOSFETFSS238Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2116[FSS238]8 51 : Source2 : Source14 3 : Source0.25.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Con

 9.3. Size:29K  sanyo
fss234.pdf

FSS230D
FSS230D

Ordering number : ENN6865FSS234N-Channel Silicon MOSFETFSS234DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4.0V drive. 2116 Ultrahigh-speed switching.[FSS234]851 : Source2 : Source3 : Source140.2 4 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim

 9.4. Size:158K  sanyo
fss237.pdf

FSS230D
FSS230D

Ordering number:ENN6149N-Channel Silicon MOSFETFSS237Load Switching ApplicationsFeatures Package Dimensions Ultralow ON resistance.unit:mm 2.5V drive.2116[FSS237]8 51 : Source2 : Source14 3 : Source0.25.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta = 25CParameter Sym

 9.5. Size:42K  sanyo
fss232.pdf

FSS230D
FSS230D

Ordering number:ENN6359N-Channel Silicon MOSFETFSS232Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2116[FSS232]8 51 : Source2 : Source140.23 : Source5.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co

 9.6. Size:45K  harris semi
fss23ao.pdf

FSS230D
FSS230D

FSS23AOD,S E M I C O N D U C T O RFSS23AORRadiation Hardened, SEGR ResistantFebruary 1998 N-Channel Power MOSFETsFeatures Description 9A, 200V, rDS(ON) = 0.330 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOSFET

 9.7. Size:46K  intersil
fss23a4.pdf

FSS230D
FSS230D

FSS23A4D,FSS23A4R7A, 250V, 0.460 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 7A, 250V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Si

 9.8. Size:45K  intersil
fss234.pdf

FSS230D
FSS230D

FSS234D, FSS234R6A, 250V, 0.600 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 6A, 250V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specifi- Total Dosecally designed for commercial and military space applications.- Meets Pre-RAD Specifications to 100K R

Otros transistores... FSL9230D , FSL9230R , FSL923AOD , FSL923AOR , FSS130D , FSS130R , FSS13AOD , FSS13AOR , 18N50 , FSS230R , FSS234D , FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D .

 

 
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