FSS230D Todos los transistores

 8.1. Size:46K  intersil
 fss230.pdf

FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

 9.1. Size:28K  sanyo
 fss239.pdf

Ordering number ENN6582 FSS239 N-Channel Silicon MOSFET FSS239 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2185 [FSS239] 85 1 No Contact 2 Source 3 Source 14 0.2 4 Gate 5.0 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maximum Ratings at Ta=25 C Par

 9.2. Size:72K  sanyo
 fss238.pdf

Ordering number ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2116 [FSS238] 8 5 1 Source 2 Source 14 3 Source 0.2 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 Specifications SANYO SOP8 Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con

 9.3. Size:29K  sanyo
 fss234.pdf

Ordering number ENN6865 FSS234 N-Channel Silicon MOSFET FSS234 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4.0V drive. 2116 Ultrahigh-speed switching. [FSS234] 85 1 Source 2 Source 3 Source 14 0.2 4 Gate 5.0 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maxim

 9.4. Size:158K  sanyo
 fss237.pdf

Ordering number ENN6149 N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions Ultralow ON resistance. unit mm 2.5V drive. 2116 [FSS237] 8 5 1 Source 2 Source 14 3 Source 0.2 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 Specifications SANYO SOP8 Absolute Maximum Ratings at Ta = 25 C Parameter Sym

 9.5. Size:42K  sanyo
 fss232.pdf

Ordering number ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2116 [FSS232] 8 5 1 Source 2 Source 14 0.2 3 Source 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Co

 9.6. Size:45K  harris semi
 fss23ao.pdf

FSS23AOD, S E M I C O N D U C T O R FSS23AOR Radiation Hardened, SEGR Resistant February 1998 N-Channel Power MOSFETs Features Description 9A, 200V, rDS(ON) = 0.330 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MOSFET

 9.7. Size:46K  intersil
 fss23a4.pdf

FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 7A, 250V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Si

 9.8. Size:45K  intersil
 fss234.pdf

FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 6A, 250V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifi- Total Dose cally designed for commercial and military space applications. - Meets Pre-RAD Specifications to 100K R