AO4611 Todos los transistores

 

AO4611 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO4611

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.3(4.9) A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 47.6 nC

Tiempo de elevación (tr): 5(6.1) nS

Conductancia de drenaje-sustrato (Cd): 155(179) pF

Resistencia drenaje-fuente RDS(on): 0.025(0.042) Ohm

Empaquetado / Estuche: SO-8

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AO4611 Datasheet (PDF)

1.1. ao4611.pdf Size:214K _aosemi

AO4611
AO4611

AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60V gate charge. The complementary MOSFETs may ID = 6.3A (VGS=10V) -4.9A be used to form a level shifted high side switch, RDS(ON) and for a host of other applications. < 25mΩ (VGS=10V) < 42

1.2. ao4611.pdf Size:1663K _kexin

AO4611
AO4611

SMD Type MOSFET Complementary Trench MOSFET AO4611 (KO4611) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 60V ID = 6.3 A (VGS = 10V) 1.50 0.15 RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 3 S1 VDS (V) = -60V 8 D2 4 G1 ID = -4.9 A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) RDS(ON) < 52mΩ (VGS = -4.5

 5.1. ao4617.pdf Size:148K _update

AO4611
AO4611

AO4617 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4617 uses advanced trench n-channel p-channel technology MOSFETs to provide excellen VDS (V) = 40V -40V RDS(ON) and low gate charge. The ID = 6A (VGS=10V) -5A (VGS = -10V) complementary MOSFETs may be used RDS(ON) RDS(ON) in H-bridge, Inverters and other < 32mΩ (VGS=10V) < 48mΩ (VG

5.2. ao4614.pdf Size:217K _update

AO4611
AO4611

AO4614 40V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4614 uses advanced trench technology VDS (V) = 40V -40V MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS = -10V) charge. The complementary MOSFETs may be used in RDS(ON) RDS(ON) H-bridge, Inverters and other applications. < 31mΩ (VGS=10V) < 45mΩ (VGS = -10

 5.3. ao4614b.pdf Size:233K _aosemi

AO4611
AO4611

AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4614B uses advanced trench technology VDS (V) = 40V, -40V MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS=-10V) charge. The complementary MOSFETs may be used RDS(ON) in H-bridge, Inverters and other applications. < 30mΩ (VGS=10V) < 45mΩ (VGS= -10V) < 38

5.4. ao4616.pdf Size:382K _aosemi

AO4611
AO4611

AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) < 20mΩ (VGS=10V) < 22mΩ (

 5.5. ao4618.pdf Size:489K _aosemi

AO4611
AO4611

AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 40V -40V complementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) < 19mΩ (VGS=10V) < 23mΩ (

5.6. ao4613.pdf Size:214K _aosemi

AO4611
AO4611

AO4613 30V Dual P + N-Channel MOSFET General Description Product Summary The AO4613 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low VDS (V) = 30V -30V gate charge. The complementary MOSFETs may ID = 7.2A (VGS=10V) -6.1A (VGS=10V) be used to form a level shifted high side switch, RDS(ON) RDS(ON) and for a host of other applications. < 24m

5.7. ao4612.pdf Size:476K _aosemi

AO4611
AO4611

AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AO4612 uses advanced trench technology VDS (V) = 60V -60V MOSFETs to provide excellent RDS(ON) and low gate ID = 4.5A (VGS=10V) -3.2A (VGS = -10V) charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON) < 56m

5.8. ao4614b.pdf Size:1597K _kexin

AO4611
AO4611

SMD Type MOSFET Complementary Trench MOSFET AO4614B (KO4614B) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) 1.50 0.15 RDS(ON) < 30mΩ (VGS = 10V) RDS(ON) < 38mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 3 S1 VDS (V) = -40V 8 D2 4 G1 ID = -5 A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 63mΩ (VGS = -4.5V)

5.9. ao4616.pdf Size:1814K _kexin

AO4611
AO4611

SMD Type MOSFET Complementary Trench MOSFET AO4616 (KO4616) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 8 A (VGS = 10V) 1.50 0.15 RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -7 A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V)

5.10. ao4618.pdf Size:2570K _kexin

AO4611
AO4611

SMD Type MOSFET Complementary Trench MOSFET AO4618 (KO4618) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 40V ID = 8 A (VGS = 10V) 1.50 0.15 RDS(ON) < 19mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 3 S1 VDS (V) = -40V 8 D2 4 G1 ID = -7 A (VGS = -10V) RDS(ON) < 23mΩ (VGS = -10V) RDS(ON) < 30mΩ (VGS = -4.5V)

5.11. ao4613.pdf Size:2169K _kexin

AO4611
AO4611

SMD Type MOSFET Complementary Trench MOSFET AO4613 (KO4613) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) 1.50 0.15 RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -6.1 A (VGS = -10V) RDS(ON) < 37mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.

5.12. ao4614a.pdf Size:2230K _kexin

AO4611
AO4611

SMD Type MOSFET Complementary Trench MOSFET AO4614A (KO4614A) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) 1.50 0.15 RDS(ON) < 31mΩ (VGS = 10V) RDS(ON) < 45mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 ● P-Channel : 2 G2 7 D2 3 S1 VDS (V) = -40V 8 D2 4 G1 ID = -5 A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 63mΩ (VGS = -4.5V)

5.13. ao4612.pdf Size:2504K _kexin

AO4611
AO4611

SMD Type MOSFET Complementary Trench MOSFET AO4612 (KO4612) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) 1.50 0.15 RDS(ON) < 56mΩ (VGS = 10V) RDS(ON) < 77mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 3 S1 VDS (V) = -60V 8 D2 4 G1 ID = -3.2 A (VGS = -10V) RDS(ON) < 105mΩ (VGS = -10V) RDS(ON) < 135mΩ (VGS = -4

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