AO4612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4612
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5(3.2) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.3(3.8) nS
   Cossⓘ - Capacitancia de salida: 60(85) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056(0.105) Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4612

AO4612 Datasheet (PDF)

..1. Size:476K aosemi
ao4612.pdf

AO461260V Complementary Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesn-channel p-channelThe AO4612 uses advanced trench technology VDS (V) = 60V -60VMOSFETs to provide excellent RDS(ON) and low gate ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

..2. Size:2504K kexin
ao4612.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4612 (KO4612)SOP-8 Unit:mm Features N-Channel : VDS (V) = 60VID = 4.5 A (VGS = 10V)1.50 0.15RDS(ON) 56m (VGS = 10V)RDS(ON) 77m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -60V8 D24 G1ID = -3.2 A (VGS = -10V)RDS(ON) 105m (VGS = -10V)RDS(ON) 135m (VGS = -4

9.1. Size:214K aosemi
ao4611.pdf

AO461160V Dual P + N-Channel MOSFETGeneral Description Product SummaryThe AO4611 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60Vgate charge. The complementary MOSFETs may ID = 6.3A (VGS=10V) -4.9Abe used to form a level shifted high side switch,RDS(ON)and for a host of other applications.

9.2. Size:148K aosemi
ao4617.pdf

AO4617Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4617 uses advanced trench n-channel p-channeltechnology MOSFETs to provide excellen VDS (V) = 40V -40VRDS(ON) and low gate charge. The ID = 6A (VGS=10V) -5A (VGS = -10V)complementary MOSFETs may be used RDS(ON) RDS(ON) in H-bridge, Inverters and other

9.3. Size:217K aosemi
ao4614.pdf

AO461440V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614 uses advanced trench technology VDS (V) = 40V -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS = -10V)charge. The complementary MOSFETs may be used inRDS(ON) RDS(ON)H-bridge, Inverters and other applications.

9.4. Size:382K aosemi
ao4616.pdf

AO461630V Complementary MOSFETGeneral Description Product SummaryThe AO4616 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 30V -30Vcomplementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V)is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

9.5. Size:233K aosemi
ao4614b.pdf

AO4614B40V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614B uses advanced trench technology VDS (V) = 40V, -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS=-10V)charge. The complementary MOSFETs may be usedRDS(ON)in H-bridge, Inverters and other applications.

9.6. Size:214K aosemi
ao4613.pdf

AO461330V Dual P + N-Channel MOSFETGeneral Description Product SummaryThe AO4613 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 30V -30Vgate charge. The complementary MOSFETs may ID = 7.2A (VGS=10V) -6.1A (VGS=10V)be used to form a level shifted high side switch,RDS(ON) RDS(ON)and for a host of other applications.

9.7. Size:489K aosemi
ao4618.pdf

AO461840V Complementary MOSFETGeneral Description Product SummaryThe AO4618 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. ThisVDS= 40V -40Vcomplementary N and P channel MOSFET configuration ID= 8A (VGS=10V) -7A (VGS=-10V)is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

9.8. Size:1663K kexin
ao4611.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4611 (KO4611)SOP-8 Unit:mm Features N-Channel : VDS (V) = 60VID = 6.3 A (VGS = 10V)1.50 0.15RDS(ON) 25m (VGS = 10V)RDS(ON) 30m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -60V8 D24 G1ID = -4.9 A (VGS = -10V)RDS(ON) 42m (VGS = -10V)RDS(ON) 52m (VGS = -4.5

9.9. Size:1814K kexin
ao4616.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4616 (KO4616)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 8 A (VGS = 10V)1.50 0.15RDS(ON) 20m (VGS = 10V)RDS(ON) 28m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -7 A (VGS = -10V)RDS(ON) 22m (VGS = -10V)RDS(ON) 40m (VGS = -4.5V)

9.10. Size:1597K kexin
ao4614b.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4614B (KO4614B)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 30m (VGS = 10V)RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

9.11. Size:2230K kexin
ao4614a.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4614A (KO4614A)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 31m (VGS = 10V)RDS(ON) 45m (VGS = 4.5V)1 S2 5 D1 6 D1 P-Channel : 2 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

9.12. Size:2169K kexin
ao4613.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4613 (KO4613)SOP-8Unit:mm Features N-Channel : VDS (V) = 30VID = 7.2 A (VGS = 10V)1.50 0.15RDS(ON) 24m (VGS = 10V)RDS(ON) 40m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -30V8 D24 G1ID = -6.1 A (VGS = -10V)RDS(ON) 37m (VGS = -10V)RDS(ON) 60m (VGS = -4.

9.13. Size:2570K kexin
ao4618.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4618 (KO4618)SOP-8Unit:mm Features N-Channel : VDS (V) = 40VID = 8 A (VGS = 10V)1.50 0.15RDS(ON) 19m (VGS = 10V)RDS(ON) 27m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -7 A (VGS = -10V)RDS(ON) 23m (VGS = -10V)RDS(ON) 30m (VGS = -4.5V)

9.14. Size:891K cn vbsemi
ao4614-30v.pdf

AO4614&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

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