FSS230R Todos los transistores

FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒

Ordering number ENN6582 FSS239 N-Channel Silicon MOSFET FSS239 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 2.5V drive. 2185 [FSS239] 85 1 No Contact 2 Source 3 Source 14 0.2 4 Gate 5.0 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maximum Ratings at Ta=25 C Par... See More ⇒

Ordering number ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2116 [FSS238] 8 5 1 Source 2 Source 14 3 Source 0.2 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 Specifications SANYO SOP8 Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con... See More ⇒

Ordering number ENN6865 FSS234 N-Channel Silicon MOSFET FSS234 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4.0V drive. 2116 Ultrahigh-speed switching. [FSS234] 85 1 Source 2 Source 3 Source 14 0.2 4 Gate 5.0 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maxim... See More ⇒

Ordering number ENN6149 N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions Ultralow ON resistance. unit mm 2.5V drive. 2116 [FSS237] 8 5 1 Source 2 Source 14 3 Source 0.2 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 Specifications SANYO SOP8 Absolute Maximum Ratings at Ta = 25 C Parameter Sym... See More ⇒

Ordering number ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2116 [FSS232] 8 5 1 Source 2 Source 14 0.2 3 Source 5.0 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Co... See More ⇒

FSS23AOD, S E M I C O N D U C T O R FSS23AOR Radiation Hardened, SEGR Resistant February 1998 N-Channel Power MOSFETs Features Description 9A, 200V, rDS(ON) = 0.330 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MOSFET... See More ⇒

FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 7A, 250V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Si... See More ⇒

FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 6A, 250V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifi- Total Dose cally designed for commercial and military space applications. - Meets Pre-RAD Specifications to 100K R... See More ⇒