AO4807 Todos los transistores

 ..1. Size:618K  aosemi
 ao4807.pdf

AO4807 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -6A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 ..2. Size:2281K  kexin
 ao4807.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4807 (KO4807) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -6 A (VGS = -10V) RDS(ON) 35m (VGS = -10V) 1 S2 5 D1 RDS(ON) 58m (VGS = -4.5V) 2 G2 6 D1 3 S1 7 D2 4 G1 8 D2 D1 D1 D2 D2 G1 G1 G2 G2 S1 S1 S2 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc

 9.1. Size:249K  aosemi
 ao4805.pdf

AO4805 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4805 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -9A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)

 9.2. Size:360K  aosemi
 ao4800b.pdf

AO4800B 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two ID (at VGS=10V) 6.9A MOSFETs make a compact and efficient switch and RDS(ON) (at VGS=10V)

 9.3. Size:609K  aosemi
 ao4803.pdf

AO4803 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -5A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

 9.4. Size:274K  aosemi
 ao4801a.pdf

 9.5. Size:360K  aosemi
 ao4800.pdf

AO4800 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6.9A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

 9.6. Size:171K  aosemi
 ao4806.pdf

AO4806 20V Dual N-Channel MOSFET General Description Product Summary The AO4806 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON) and low gate charge. They ID = 9.4A (VGS = 10V) offer operation over a wide gate drive range from RDS(ON)

 9.7. Size:274K  aosemi
 ao4801.pdf

AO4801 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

 9.8. Size:608K  aosemi
 ao4803a.pdf

AO4803A 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -5A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.9. Size:1138K  kexin
 ao4805.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4805 (KO4805) SOP-8 Unit mm Features VDS (V) = -30V ID = -9 A (VGS = -20V) 1.50 0.15 RDS(ON) 15m (VGS = -20V) RDS(ON) 18m (VGS = -10V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V

 9.10. Size:1813K  kexin
 ao4803.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4803 (KO4803) SOP-8 Unit mm Features VDS (V) = -30V ID = -5 A (VGS = -10V) 1.50 0.15 RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D D D G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt

 9.11. Size:1113K  kexin
 ao4801a.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4801A (KO4801A) SOP-8 Unit mm Features VDS (V) = -30V ID = -5 A (VGS = -10V) 1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V) 1 S2 5 D1 RDS(ON) 80m (VGS = -2.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

 9.12. Size:1289K  kexin
 ao4800.pdf

SMD Type MOSFET Dual N-Channel MOSFET AO4800 (KO4800) SOP-8 Unit mm Features VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V) 1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.13. Size:1177K  kexin
 ao4806.pdf

SMD Type MOSFET Dual N-Channel MOSFET AO4806 (KO4806) SOP-8 Features VDS (V) = 20V ID = 9.4 A (VGS = 10V) RDS(ON) 14m (VGS = 10V) 1.50 0.15 RDS(ON) 15m (VGS = 4.5V) RDS(ON) 21m (VGS = 2.5V) RDS(ON) 30m (VGS = 1.8V) 1 Source2 5 Drain1 6 Drain1 2 Gate2 ESD Rating 2000V HBM 7 Drain2 3 Source1 8 Drain2 4 Gate1 D2

 9.14. Size:1538K  kexin
 ao4801.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4801 (KO4801) SOP-8 Unit mm Features VDS (V) = -30V ID = -5 A (VGS = -10V) 1.50 0.15 RDS(ON) 48m (VGS = -10V) RDS(ON) 57m (VGS = -4.5V) RDS(ON) 80m (VGS = -2.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating U

 9.15. Size:2058K  kexin
 ao4803a.pdf

SMD Type MOSFET Dual P-Channel MOSFET AO4803A (KO4803A) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -5 A (VGS = -10V) RDS(ON) 46m (VGS = -10V) RDS(ON) 74m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D D D G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vo

 9.16. Size:1267K  msksemi
 ao4803-ms.pdf

www.msksemi.com AO4803-MS Semiconductor Compiance Product Summary SOP-8 VDS -30V I (at V =-10V) -5A D GS R (at V =-10V)

 9.17. Size:1721K  cn vbsemi
 ao4805.pdf

AO4805 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 9.5 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.028 at VGS = - 4.5 V - 8.0 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G1 2

 9.18. Size:852K  cn vbsemi
 ao4800.pdf

AO4800 www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box L

 9.19. Size:1845K  cn vbsemi
 ao4806.pdf

AO4806 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 To

 9.20. Size:864K  cn vbsemi
 ao4801.pdf

AO4801 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View