AO4822A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4822A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4822A

AO4822A Datasheet (PDF)

..1. Size:299K aosemi
ao4822a.pdf

AO4822A30V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4822A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

..2. Size:2312K kexin
ao4822a.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4822A (KO4822A)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

8.1. Size:299K aosemi
ao4822.pdf

AO482230V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4822 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

8.2. Size:2544K kexin
ao4822.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4822 (KO4822)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

9.1. Size:168K aosemi
ao4828.pdf

AO482860V Dual N-Channel MOSFETGeneral Description FeaturesThe AO4828 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. ThisID = 4.5A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

9.2. Size:164K aosemi
ao4826.pdf

AO482660V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO4826 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. ThisID = 6.3A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

9.3. Size:261K aosemi
ao4821.pdf

AO482112V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-12VThe AO4821 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -9Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=-4.5V)

9.4. Size:1696K kexin
ao4824l.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4824L (KO4824L)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 8.5A (VGS = 10V) RDS(ON) 17m (VGS = 10V)1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V)6 D12 G27 D23 S1N-Channel 28 D24 G1 VDS (V) = 30V ID = 9.8A (VGS = 10V) RDS(ON) 13m (VGS = 10V) RDS(ON) 15

9.5. Size:1032K kexin
ao4828.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4828 (KO4828)SOP-8 Unit:mm Features VDS (V) = 60V ID = 4.5A (VGS = 10V)1.50 0.15 RDS(ON) 56m (VGS = 10V) RDS(ON) 77m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D D1 2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Ga

9.6. Size:1278K kexin
ao4826.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4826 (KO4826)SOP-8 Unit:mm Features VDS (V) = 60V ID = 6.3A (VGS = 10V)1.50 0.15 RDS(ON) 25m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D1G2G1S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Ga

9.7. Size:1372K kexin
ao4821.pdf

SMD Type MOSFETDual P-Channel MOSFETAO4821 (KO4821)SOP-8 Unit:mm Features VDS (V) = -12V ID = -9 A (VGS = -4.5V)1.50 0.15 RDS(ON) 19m (VGS = -4.5V) RDS(ON) 24m (VGS = -2.5V)1 S2 5 D1 RDS(ON) 30m (VGS = -1.8V)6 D12 G27 D23 S18 D24 G1D1D2Rg RgG1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbo

9.8. Size:906K cn vbsemi
ao4826.pdf

AO4826www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

9.9. Size:1945K cn vbsemi
ao4821.pdf

AO4821www.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: