AO4828 Todos los transistores

AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 4.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFET Dual N-Channel MOSFET AO4828 (KO4828) SOP-8 Unit mm Features VDS (V) = 60V ID = 4.5A (VGS = 10V) 1.50 0.15 RDS(ON) 56m (VGS = 10V) RDS(ON) 77m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D 1 2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Ga

AO4822A 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

AO4822 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

AO4826 60V Dual N-Channel MOSFET General Description Product Summary The AO4826 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 6.3A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

AO4821 12V Dual P-Channel MOSFET General Description Product Summary VDS -12V The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -9A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=-4.5V)

SMD Type MOSFET Dual N-Channel MOSFET AO4824L (KO4824L) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V 1.50 0.15 ID = 8.5A (VGS = 10V) RDS(ON) 17m (VGS = 10V) 1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 N-Channel 2 8 D2 4 G1 VDS (V) = 30V ID = 9.8A (VGS = 10V) RDS(ON) 13m (VGS = 10V) RDS(ON) 15

SMD Type MOSFET Dual N-Channel MOSFET AO4822A (KO4822A) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V) 1 S2 5 D1 ESD Rating 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

SMD Type MOSFET Dual N-Channel MOSFET AO4822 (KO4822) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V) 1 S2 5 D1 ESD Rating 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V

SMD Type MOSFET Dual N-Channel MOSFET AO4826 (KO4826) SOP-8 Unit mm Features VDS (V) = 60V ID = 6.3A (VGS = 10V) 1.50 0.15 RDS(ON) 25m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Ga

SMD Type MOSFET Dual P-Channel MOSFET AO4821 (KO4821) SOP-8 Unit mm Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) 1.50 0.15 RDS(ON) 19m (VGS = -4.5V) RDS(ON) 24m (VGS = -2.5V) 1 S2 5 D1 RDS(ON) 30m (VGS = -1.8V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 Rg Rg G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbo

AO4826 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M