AO4832 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO483230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4832 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. ID (at VGS=10V) 10AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

SMD Type MOSFETDual N-Channel MOSFETAO4832 (KO4832)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 10A (VGS = 10V) RDS(ON) 13m (VGS = 10V)1 S2 5 D1 RDS(ON) 17.5m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2D1 D2G1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vol

AO483830V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4838 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 11Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

AO483080V Dual N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 80VThe AO4830 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge . ThisID = 3.5A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

SMD Type MOSFETDual N-Channel MOSFETAO4838 (KO4838)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 11A (VGS = 10V) RDS(ON) 9.6m (VGS = 10V) 1 S2 5 D1 RDS(ON) 13m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2D1 D2G1 G2G1 G2S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

SMD Type MOSFETDual N-Channel MOSFETAO4830 (KO4830)SOP-8 Unit:mm Features VDS (V) = 80V ID = 3.5A (VGS = 10V)1.50 0.15 RDS(ON) 75m (VGS = 10V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 80V Gate-Source Voltage VGS 30 TA=25 3.