AO4832 Todos los transistores

AO4832 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 10A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

SMD Type MOSFET Dual N-Channel MOSFET AO4832 (KO4832) SOP-8 Unit mm Features VDS (V) = 30V 1.50 0.15 ID = 10A (VGS = 10V) RDS(ON) 13m (VGS = 10V) 1 S2 5 D1 RDS(ON) 17.5m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 D1 D2 G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vol

AO4838 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 11A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

AO4830 80V Dual N-Channel MOSFET General Description Product Summary VDS (V) = 80V The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This ID = 3.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFET Dual N-Channel MOSFET AO4838 (KO4838) SOP-8 Unit mm Features VDS (V) = 30V 1.50 0.15 ID = 11A (VGS = 10V) RDS(ON) 9.6m (VGS = 10V) 1 S2 5 D1 RDS(ON) 13m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 D1 D2 G1 G2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt

SMD Type MOSFET Dual N-Channel MOSFET AO4830 (KO4830) SOP-8 Unit mm Features VDS (V) = 80V ID = 3.5A (VGS = 10V) 1.50 0.15 RDS(ON) 75m (VGS = 10V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 30 TA=25 3.