AO4922 Todos los transistores

 

AO4922 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO4922

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9(7.3) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5(3.5) nS

Cossⓘ - Capacitancia de salida: 317(88) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0158(0.024) Ohm

Encapsulados: SO-8

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AO4922 datasheet

 ..1. Size:239K  aosemi
 ao4922.pdf pdf_icon

AO4922

AO4922 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4922 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON)

 ..2. Size:2519K  kexin
 ao4922.pdf pdf_icon

AO4922

SMD Type MOSFET Dual N-Channel MOSFET AO4922 (KO4922) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V 1.50 0.15 ID = 9 A (VGS = 10V) RDS(ON) 15.8m (VGS = 10V) 1 S1 5 D2 6 D2 2 G1 RDS(ON) 18.5m (VGS = 4.5V) 7 D1 3 S2 SRFETTM Soft Recovery MOSFET Integrated Schottky Diode 8 D1 4 G2 N-Channel 2 VDS (V) = 30V ID = 7.3 A (VGS =

 9.1. Size:237K  aosemi
 ao4928.pdf pdf_icon

AO4922

AO4928 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4928 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30V MOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V) synchronous rectifier combination for use in DC-DC RDS(ON)

 9.2. Size:239K  aosemi
 ao4926.pdf pdf_icon

AO4922

AO4926 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4926 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON)

MOSTRAR MÁS

Otros transistores... AO4852, AO4854, AO4862, AO4882, AO4884, AO4886, AO4892, AO4914, 10N60, AO4924, AO4932, AO4938, AO4940, AO4948, AO4952, AO5401E, AO5404E

 

 

 

 

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