AO6402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO6402
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 2.55 nC
   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de MOSFET AO6402

AO6402 Datasheet (PDF)

..1. Size:268K aosemi
ao6402.pdf

AO640230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO6402 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5Abe used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

..2. Size:1316K kexin
ao6402.pdf

SMD Type MOSFETN-Channel MOSFETAO6402 (KO6402)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID = 5 A (VGS = 10V) RDS(ON) 31m (VGS = 10V)2 31 RDS(ON) 43m (VGS = 4.5V)+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGS Absolute Maximum Ratings Ta = 25Parameter S

0.1. Size:218K aosemi
ao6402a.pdf

AO6402A30V N-Channel MOSFETGeneral Description Product SummaryThe AO6402A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 7.5A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

0.2. Size:1590K kexin
ao6402a.pdf

SMD Type MOSFETN-Channel MOSFETAO6402A (KO6402A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) = 30V 6 5 4 ID = 7.5 A (VGS = 10V) RDS(ON) 24m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D 1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Parame

9.1. Size:534K aosemi
ao6403.pdf

AO640330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6403 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -6Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

9.2. Size:501K aosemi
ao6405.pdf

AO640530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6405 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=10V) -5Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

9.3. Size:323K aosemi
ao6409a.pdf

AO6409A20V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO6409A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5.5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

9.4. Size:516K aosemi
ao6401.pdf

AO640130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

9.5. Size:169K aosemi
ao6408.pdf

AO640820V N-Channel MOSFETGeneral Description FeaturesThe AO6408 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON) and low gate charge. It offers ID = 8.8A (VGS = 10V)operation over a wide gate drive range from 1.8V to RDS(ON)

9.6. Size:213K aosemi
ao6404.pdf

AO640420V N-Channel MOSFETGeneral Description Product SummaryThe AO6404 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8.6A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)

9.7. Size:489K aosemi
ao6400.pdf

AO640030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO6400 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 6.9Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)

9.8. Size:330K aosemi
ao6409.pdf

AO640920V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO6409 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -5.5Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)

9.9. Size:237K aosemi
ao6401a.pdf

AO6401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6401A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -5Awith gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS=-10V)

9.10. Size:1786K kexin
ao6403.pdf

SMD Type MOSFETP-Channel MOSFETAO6403 (KO6403)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-6 A (VGS =-10V) RDS(ON) 35m (VGS =-10V) RDS(ON) 58m (VGS =-4.5V) 2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Absolute Maximum Ratings Ta = 25Par

9.11. Size:1701K kexin
ao6405.pdf

SMD Type MOSFETP-Channel MOSFETAO6405 (KO6405)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 52m (VGS =-10V) RDS(ON) 87m (VGS =-4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Absolute Maximum Ratings Ta = 25Pa

9.12. Size:2011K kexin
ao6409a.pdf

SMD Type MOSFETP-Channel MOSFETAO6409A (KO6409A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-20V6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V)2 31 RDS(ON) 65m (VGS =-1.8V)+0.020.15 -0.02+0.01 ESD Rating: 2000V HBM -0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gat

9.13. Size:1723K kexin
ao6401.pdf

SMD Type MOSFETP-Channel MOSFETAO6401 (KO6401)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Abso

9.14. Size:1497K kexin
ao6408.pdf

SMD Type MOSFETN-Channel MOSFETAO6408 (KO6408)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID =8.8 A (VGS = 10V) RDS(ON) 18m (VGS = 10V)2 31 RDS(ON) 20m (VGS = 4.5V)+0.020.15 -0.02+0.01 RDS(ON) 25m (VGS = 2.5V)-0.01+0.2 RDS(ON) 32m (VGS = 2.5V)-0.1 ESD Rating: 2000V HBM1 Drain 4

9.15. Size:1600K kexin
ao6404.pdf

SMD Type MOSFETN-Channel MOSFETAO6404 (KO6404)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) = 20V6 5 4 ID = 8.6 A (VGS = 10V) RDS(ON) 17m (VGS = 10V) RDS(ON) 18m (VGS = 4.5V)2 31 RDS(ON) 24m (VGS = 2.5V)+0.020.15 -0.02+0.01 RDS(ON) 33m (VGS = 1.8V) -0.01+0.2 ESD Rating: 2000V HBM -0.1D1 Drain

9.16. Size:1655K kexin
ao6400.pdf

SMD Type MOSFETN-Channel MOSFETAO6400 (KO6400)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V)2 31 RDS(ON) 52m (VGS = 2.5V)+0.020.15 -0.02+0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG GSS

9.17. Size:1740K kexin
ao6409.pdf

SMD Type MOSFETP-Channel MOSFETAO6409 (KO6409)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-20V6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V)2 31 RDS(ON) 65m (VGS =-1.8V)+0.020.15 -0.02+0.01 ESD Rating: 2000V HBM -0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate

9.18. Size:2477K kexin
ao6401-hf ko6401-hf.pdf

SMD Type MOSFETP-Channel MOSFETAO6401-HF (KO6401-HF)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01 Pb-Free Package May be Available. The G-Suffix Denotes a+0.2-0.1Pb-Free

9.19. Size:2465K kexin
ao6401a.pdf

SMD Type MOSFETP-Channel MOSFETAO6401A (KO6401A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Ab

9.20. Size:834K cn vbsemi
ao6403.pdf

AO6403www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Chan

9.21. Size:1709K cn vbsemi
ao6400.pdf

AO6400www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC Co

9.22. Size:834K cn vbsemi
ao6409.pdf

AO6409www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Chan

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