AO6402A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO6402A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 2.7 nS
Cossⓘ - Capacitancia de salida: 67 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Encapsulados: TSOP-6
Búsqueda de reemplazo de AO6402A MOSFET
- Selecciónⓘ de transistores por parámetros
AO6402A datasheet
..1. Size:218K aosemi
ao6402a.pdf 
AO6402A 30V N-Channel MOSFET General Description Product Summary The AO6402A uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 7.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)
..2. Size:1590K kexin
ao6402a.pdf
SMD Type MOSFET N-Channel MOSFET AO6402A (KO6402A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) = 30V 6 5 4 ID = 7.5 A (VGS = 10V) RDS(ON) 24m (VGS = 10V) RDS(ON) 35m (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute Maximum Ratings Ta = 25 Parame
8.1. Size:268K aosemi
ao6402.pdf
AO6402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5A be used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)
8.2. Size:1316K kexin
ao6402.pdf
SMD Type MOSFET N-Channel MOSFET AO6402 (KO6402) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 30V ID = 5 A (VGS = 10V) RDS(ON) 31m (VGS = 10V) 2 3 1 RDS(ON) 43m (VGS = 4.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute Maximum Ratings Ta = 25 Parameter S
9.1. Size:534K aosemi
ao6403.pdf
AO6403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -6A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)
9.2. Size:501K aosemi
ao6405.pdf
AO6405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=10V) -5A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)
9.3. Size:323K aosemi
ao6409a.pdf
AO6409A 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5.5A with gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)
9.4. Size:516K aosemi
ao6401.pdf
AO6401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)
9.5. Size:169K aosemi
ao6408.pdf
AO6408 20V N-Channel MOSFET General Description Features The AO6408 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON) and low gate charge. It offers ID = 8.8A (VGS = 10V) operation over a wide gate drive range from 1.8V to RDS(ON)
9.6. Size:213K aosemi
ao6404.pdf
AO6404 20V N-Channel MOSFET General Description Product Summary The AO6404 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8.6A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)
9.7. Size:489K aosemi
ao6400.pdf
AO6400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 6.9A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)
9.8. Size:330K aosemi
ao6409.pdf
AO6409 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -5.5A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)
9.9. Size:237K aosemi
ao6401a.pdf
AO6401A 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -5A with gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS=-10V)
9.10. Size:1786K kexin
ao6403.pdf
SMD Type MOSFET P-Channel MOSFET AO6403 (KO6403) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-6 A (VGS =-10V) RDS(ON) 35m (VGS =-10V) RDS(ON) 58m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G G S S Absolute Maximum Ratings Ta = 25 Par
9.11. Size:1701K kexin
ao6405.pdf
SMD Type MOSFET P-Channel MOSFET AO6405 (KO6405) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 52m (VGS =-10V) RDS(ON) 87m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G G S S Absolute Maximum Ratings Ta = 25 Pa
9.12. Size:2011K kexin
ao6409a.pdf
SMD Type MOSFET P-Channel MOSFET AO6409A (KO6409A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-20V 6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V) 2 3 1 RDS(ON) 65m (VGS =-1.8V) +0.02 0.15 -0.02 +0.01 ESD Rating 2000V HBM -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gat
9.13. Size:1723K kexin
ao6401.pdf
SMD Type MOSFET P-Channel MOSFET AO6401 (KO6401) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01 -0.01 +0.2 -0.1 D D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G G S S Abso
9.14. Size:1497K kexin
ao6408.pdf
SMD Type MOSFET N-Channel MOSFET AO6408 (KO6408) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID =8.8 A (VGS = 10V) RDS(ON) 18m (VGS = 10V) 2 3 1 RDS(ON) 20m (VGS = 4.5V) +0.02 0.15 -0.02 +0.01 RDS(ON) 25m (VGS = 2.5V) -0.01 +0.2 RDS(ON) 32m (VGS = 2.5V) -0.1 ESD Rating 2000V HBM 1 Drain 4
9.15. Size:1600K kexin
ao6404.pdf
SMD Type MOSFET N-Channel MOSFET AO6404 (KO6404) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) = 20V 6 5 4 ID = 8.6 A (VGS = 10V) RDS(ON) 17m (VGS = 10V) RDS(ON) 18m (VGS = 4.5V) 2 3 1 RDS(ON) 24m (VGS = 2.5V) +0.02 0.15 -0.02 +0.01 RDS(ON) 33m (VGS = 1.8V) -0.01 +0.2 ESD Rating 2000V HBM -0.1 D 1 Drain
9.16. Size:1655K kexin
ao6400.pdf
SMD Type MOSFET N-Channel MOSFET AO6400 (KO6400) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) 2 3 1 RDS(ON) 52m (VGS = 2.5V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G G S S
9.17. Size:1740K kexin
ao6409.pdf
SMD Type MOSFET P-Channel MOSFET AO6409 (KO6409) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-20V 6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V) 2 3 1 RDS(ON) 65m (VGS =-1.8V) +0.02 0.15 -0.02 +0.01 ESD Rating 2000V HBM -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate
9.18. Size:2477K kexin
ao6401-hf ko6401-hf.pdf
SMD Type MOSFET P-Channel MOSFET AO6401-HF (KO6401-HF) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01 -0.01 Pb-Free Package May be Available. The G-Suffix Denotes a +0.2 -0.1 Pb-Free
9.19. Size:2465K kexin
ao6401a.pdf
SMD Type MOSFET P-Channel MOSFET AO6401A (KO6401A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01 -0.01 +0.2 -0.1 D D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G G S S Ab
9.20. Size:834K cn vbsemi
ao6403.pdf
AO6403 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Chan
9.21. Size:1709K cn vbsemi
ao6400.pdf
AO6400 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS DC/DC Co
9.22. Size:834K cn vbsemi
ao6409.pdf
AO6409 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Chan
Otros transistores... AO5600E, AO5800E, AO5803E, AO5804E, AO6400, AO6401, AO6401A, AO6402, AO3401, AO6403, AO6404, AO6405, AO6408, AO6409, AO6409A, AO6415, AO6420
