AO6415 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO6415
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5 nS
Cossⓘ - Capacitancia de salida: 63 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
Encapsulados: TSOP-6
Búsqueda de reemplazo de AO6415 MOSFET
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AO6415 datasheet
ao6415.pdf
AO6415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -3.3A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)
ao6415.pdf
SMD Type MOSFET P-Channel MOSFET AO6415 (KO6415) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-20V 6 5 4 ID =-3.3A (VGS =-10V) RDS(ON) 82m (VGS =-10V) RDS(ON) 100m (VGS =-4.5V) RDS(ON) 140m (VGS =-2.5V) 2 3 1 +0.02 0.15 -0.02 ESD Rating 2000V HBM +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate
ao6414 mc6414.pdf
Freescale AO6414/ MC6414 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.4 Low thermal impedance 60 107 @ VGS = 4.5V 3.1 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX
ao6411.pdf
AO6411 20V P-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology -20V Low RDS(ON) ID (at VGS=-4.5V) -7A Low Gate Charge RDS(ON) (at VGS=-4.5V)
Otros transistores... AO6402 , AO6402A , AO6403 , AO6404 , AO6405 , AO6408 , AO6409 , AO6409A , 13N50 , AO6420 , AO6422 , AO6424 , AO6424A , AO6432 , AO6601 , AO6602 , AO6604 .
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