AO6424A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO6424A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de MOSFET AO6424A

AO6424A Datasheet (PDF)

..1. Size:254K aosemi
ao6424a.pdf

AO6424A30V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6.5A Low Gate Charge RDS(ON) (at VGS=10V)

..2. Size:1237K kexin
ao6424a.pdf

SMD Type MOSFETN-Channel MOSFETAO6424A (KO6424A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) = 30V6 5 4 ID =6.5 A (VGS = 10V) RDS(ON) 35m (VGS = 10V) RDS(ON) 48m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Paramet

8.1. Size:324K aosemi
ao6424.pdf

AO642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO6424 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5Abe used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

8.2. Size:1549K kexin
ao6424.pdf

SMD Type MOSFETN-Channel MOSFETAO6424 (KO6424)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID =5 A (VGS = 10V) RDS(ON) 31m (VGS = 10V) RDS(ON) 43m (VGS = 4.5V) 2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Parameter Sy

9.1. Size:220K aosemi
ao6422.pdf

AO642220V N-Channel MOSFETGeneral Description Product SummaryThe AO6422 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and ID = 5A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

9.2. Size:195K aosemi
ao6420.pdf

AO642060V N-Channel MOSFETGeneral Description Product SummaryThe AO6420 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. This ID = 4.2A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

9.3. Size:1794K kexin
ao6422.pdf

SMD Type MOSFETN-Channel MOSFETAO6422 (KO6422)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID =5 A (VGS = 4.5V) RDS(ON) 44m (VGS = 4.5V) RDS(ON) 55m (VGS = 2.5V)2 31 RDS(ON) 72m (VGS = 1.8V)+0.020.15 -0.02+0.01-0.01+0.2-0.1D 1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute

9.4. Size:1075K kexin
ao6420.pdf

SMD Type MOSFETN-Channel MOSFETAO6420 (KO6420)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 60V ID =4.2 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) RDS(ON) 75m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D 1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Paramete

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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