AO7404 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Búsqueda de reemplazo de MOSFET AO7404

AO7404 Datasheet (PDF)

1.1. ao7404.pdf Size:240K _aosemi

AO7404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7404 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 1 A (VGS = 4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON) < 225mΩ (VGS = 4.5V) small SOT323 footprint. It can be used for a wide RDS(ON) < 290mΩ (VGS = 2.5V) vari

5.1. ao7403.pdf Size:110K _aosemi

AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7403 uses advanced trench technology to provide VDS (V) = -20V excellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V) voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON) < 470mΩ (VGS = -4.5V) be used for a wide variety of applications, includi

5.2. ao7400.pdf Size:191K _aosemi

AO7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO7400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V) < 55mΩ small SOT323 footprint. It can be used for a wide RDS(ON) (at VGS =4.5V) < 65mΩ variety of applications, includi

 5.3. ao7407.pdf Size:345K _aosemi

AO7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.2A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V) < 135mΩ use as a load switch or in PWM applications. RDS(ON) (at VGS =-2.5V) < 170mΩ RDS(ON

5.4. ao7401.pdf Size:202K _aosemi

AO7401 30V P-Channel MOSFET General Description Product Summary VDS The AO7401 uses advanced trench technology to -30V provide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V) < 115mΩ small SOT363 footprint. It can be used for a wide RDS(ON) (at VGS =-4.5V) < 140mΩ variety of applications,

 5.5. ao7405.pdf Size:207K _aosemi

AO7405 30V P-Channel MOSFET General Description Product Summary VDS The AO7405 uses advanced trench technology to -30V provide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V) < 115mΩ small SOT363 footprint. It can be used for a wide RDS(ON) (at VGS =-4.5V) < 140mΩ variety of applications,

5.6. ao7408.pdf Size:349K _aosemi

AO7408 20V N-Channel MOSFET General Description Product Summary VDS 20V The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V) < 62mΩ use as a load switch or in PWM applications. RDS(ON) (at VGS=2.5V) < 75mΩ RDS(ON) (at VGS=1

5.7. ao7400.pdf Size:1277K _kexin

SMD Type MOSFET N-Channel MOSFET AO7400 (KO7400) ■ Features ● VDS (V) = 30V ● ID = 1.7 A (VGS = 10V) ● RDS(ON) ＜ 55mΩ (VGS = 10V) D ● RDS(ON) ＜ 65mΩ (VGS = 4.5V) ● RDS(ON) ＜ 85mΩ (VGS = 2.5V) 1 Gate 2 Source G 3 Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: PSMNR90-30BL | PSMN9R8-30MLC | PSMN9R5-100BS | PSMN9R0-25MLC | PSMN8R7-80BS | PSMN8R5-108ES | PSMN8R5-100XS | PSMN8R5-100PS | PSMN8R5-100ES | PSMN8R0-40BS | PSMN7R8-120PS | PSMN7R8-120ES | PSMN7R8-100PSE | PSMN7R6-60XS | PSMN7R6-60BS |