AO7407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO740720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7407 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

AO7407www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Converter

A O7 4 07P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeAO7407 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C unless ot

AO740130V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7401 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

AO7403P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7403 uses advanced trench technology to provide VDS (V) = -20Vexcellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V)voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON)

AO740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7400 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V)

AO740820V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7408 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V)

AO740530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7405 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

AO7404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7404 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 1 A (VGS = 4.5V)operation with gate voltages as low as 1.8V, in the RDS(ON)

SMD Type MOSFETN-Channel MOSFETAO7400 (KO7400) Features VDS (V) = 30V ID = 1.7 A (VGS = 10V) RDS(ON) 55m (VGS = 10V)D RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V)1 Gate2 SourceG3 DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 12

AO7401www.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Converter

AO7400www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP