AO7407 Todos los transistores

 ..1. Size:345K  aosemi
 ao7407.pdf

AO7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.2A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

 ..2. Size:837K  cn vbsemi
 ao7407.pdf

AO7407 www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Converter

 ..3. Size:2520K  cn tech public
 ao7407.pdf

A O7 4 07 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size AO7407 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=25 C unless ot

 9.1. Size:202K  aosemi
 ao7401.pdf

AO7401 30V P-Channel MOSFET General Description Product Summary VDS The AO7401 uses advanced trench technology to -30V provide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

 9.2. Size:110K  aosemi
 ao7403.pdf

AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7403 uses advanced trench technology to provide VDS (V) = -20V excellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V) voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON)

 9.3. Size:191K  aosemi
 ao7400.pdf

AO7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO7400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V)

 9.4. Size:349K  aosemi
 ao7408.pdf

AO7408 20V N-Channel MOSFET General Description Product Summary VDS 20V The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V)

 9.5. Size:207K  aosemi
 ao7405.pdf

AO7405 30V P-Channel MOSFET General Description Product Summary VDS The AO7405 uses advanced trench technology to -30V provide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4A operation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)

 9.6. Size:240K  aosemi
 ao7404.pdf

AO7404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7404 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 1 A (VGS = 4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON)

 9.7. Size:1277K  kexin
 ao7400.pdf

SMD Type MOSFET N-Channel MOSFET AO7400 (KO7400) Features VDS (V) = 30V ID = 1.7 A (VGS = 10V) RDS(ON) 55m (VGS = 10V) D RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V) 1 Gate 2 Source G 3 Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12

 9.8. Size:1711K  cn vbsemi
 ao7401.pdf

AO7401 www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Converter

 9.9. Size:873K  cn vbsemi
 ao7400.pdf

AO7400 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC AP