AO7411 Todos los transistores

 

AO7411 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO7411

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SC70-6

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AO7411 datasheet

 ..1. Size:353K  aosemi
ao7411.pdf pdf_icon

AO7411

AO7411 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8A gate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

 9.1. Size:209K  aosemi
ao7417.pdf pdf_icon

AO7411

AO7417 20V P-Channel MOSFET General Description Product Summary VDS The AO7417 uses advanced trench technology to provide -20V excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2A voltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)

 9.2. Size:199K  aosemi
ao7414.pdf pdf_icon

AO7411

 9.3. Size:213K  aosemi
ao7413.pdf pdf_icon

AO7411

AO7413 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

Otros transistores... AO7400 , AO7401 , AO7403 , AO7404 , AO7405 , AO7407 , AO7408 , AO7410 , 18N50 , AO7412 , AO7413 , AO7414 , AO7415 , AO7417 , AO7600 , AO7800 , AO7801 .

History: VBA3410

 

 

 


History: VBA3410

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