FSS9130R Todos los transistores

 

FSS9130R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FSS9130R
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.66 Ohm
   Paquete / Cubierta: TO257AA

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FSS9130R Datasheet (PDF)

 7.1. Size:44K  intersil
fss9130.pdf

FSS9130R
FSS9130R

FSS9130D,FSS9130R6A, -100V, 0.660 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

 8.1. Size:65K  intersil
fss913ao.pdf

FSS9130R
FSS9130R

FSS913A0D, FSS913A0RData Sheet June 1999 File Number 4451.310A, -100V, 0.280 Ohm, Radiation FeaturesHardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280Power MOSFETs Total DoseThe Discrete Products Operation of Intersil has developed a- Meets Pre-RAD Specifications to 100K RAD (Si)series of Radiation Hardened MOSFETs specificallydesigned for commercial an

Otros transistores... FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , FSS430R , FSS9130D , MMIS60R580P , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R .

 

 
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