AO7415 Todos los transistores

 

AO7415 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO7415

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SC70-6

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AO7415 datasheet

 ..1. Size:213K  aosemi
ao7415.pdf pdf_icon

AO7415

AO7415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

 9.1. Size:209K  aosemi
ao7417.pdf pdf_icon

AO7415

AO7417 20V P-Channel MOSFET General Description Product Summary VDS The AO7417 uses advanced trench technology to provide -20V excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2A voltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)

 9.2. Size:199K  aosemi
ao7414.pdf pdf_icon

AO7415

 9.3. Size:213K  aosemi
ao7413.pdf pdf_icon

AO7415

AO7413 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

Otros transistores... AO7405 , AO7407 , AO7408 , AO7410 , AO7411 , AO7412 , AO7413 , AO7414 , STF13NM60N , AO7417 , AO7600 , AO7800 , AO7801 , AO8801 , AO8801A , AO8804 , AO8807 .

 

 

 


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