AO8801 Todos los transistores

 ..1. Size:302K  aosemi
 ao8801.pdf

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and operation ID = -4.7 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is RDS(ON)

 ..2. Size:1349K  cn vbsemi
 ao8801.pdf

AO8801 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.036 at VGS = - 10 V - 5.2 - 30 RoHS 0.055 at VGS = - 4.5 V - 4.2 COMPLIANT APPLICATIONS Load Switch Battery Switch S1 S2 TSSOP-8 G1 G2 D1 1 D2 8 S1 2 S2 7 S1 3 S2 6 G1 4 G2 5 Top View D1 D2 P-Channel

 0.1. Size:349K  aosemi
 ao8801a.pdf

AO8801A 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.5A with gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

 9.1. Size:114K  aosemi
 ao8803.pdf

AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803/L uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and ID = -7 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

 9.2. Size:108K  aosemi
 ao8806.pdf

 9.3. Size:139K  aosemi
 ao8804.pdf

AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8804 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)

 9.4. Size:152K  aosemi
 ao8807.pdf

AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and ID = -6.5 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

 9.5. Size:365K  aosemi
 ao8808a.pdf

AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808A uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.9A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)

 9.6. Size:1565K  cn vbsemi
 ao8808a.pdf

AO8808A www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.013 at VGS = 4.5 V Available 7.6 20 RoHS* 0.020 at VGS = 2.5 V 6.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25