AO8810 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO8810
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 328 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TSSOP-8

Búsqueda de reemplazo de MOSFET AO8810

AO8810 Datasheet (PDF)

..1. Size:216K aosemi
ao8810.pdf

AO881020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8810 uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It is ESD protected. ID (at VGS=4.5V) 7AThis device is suitable for use as a uni-directional or bi- RDS(ON) (at VGS= 4.5V)

..2. Size:1301K kexin
ao8810.pdf

SMD Type MOSFETDual N-Channel MOSFETAO8810SOP-8 Features VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) 20m (VGS = 4.5V) 1.50 0.15 RDS(ON) 24m (VGS = 2.5V) RDS(ON) 32m (VGS = 1.8V) ESD Rating: 2000V HBMD1 D2S1 1 8 D12 7G1 D13 6S2 D24 5G2 D2G1 G2S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

..3. Size:841K cn vbsemi
ao8810.pdf

AO8810www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA = 25

9.1. Size:113K aosemi
ao8818.pdf

AO8818Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8818 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 7A (VGS = 10V)operation with gate voltages as low as 2.5V while RDS(ON)

9.2. Size:134K aosemi
ao8816.pdf

AO8816Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8816 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 2.5V. This RDS(ON)

9.3. Size:411K aosemi
ao8814.pdf

AO8814Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description FeaturesThe AO8814 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 7.5 A (VGS = 10V)operation with gate voltages as low as 1.8V whileRDS(ON)

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