AOB1100L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOB1100L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 721 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0117 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET AOB1100L

AOB1100L Datasheet (PDF)

..1. Size:292K aosemi
aob1100l.pdf

AOT1100L/AOB1100L100V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS100VThe AOT1100L/AOB1100L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 130Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

..2. Size:253K inchange semiconductor
aob1100l.pdf

isc N-Channel MOSFET Transistor AOB1100LFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 11.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

9.1. Size:292K aosemi
aob11s60l.pdf

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

9.2. Size:292K aosemi
aob11s60.pdf

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aob11n60.pdf

AOB11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOB11N60 has been fabricated using an advanced 700V@150high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

9.4. Size:470K aosemi
aob11c60.pdf

AOT11C60/AOB11C60/AOTF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOT11C60 & AOB11C60 & AOTF11C60 arefabricated using an advanced high voltage MOSFET IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max

9.5. Size:300K aosemi
aob11s65l.pdf

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

9.6. Size:299K aosemi
aob11s65.pdf

9.7. Size:253K inchange semiconductor
aob11s60.pdf

isc N-Channel MOSFET Transistor AOB11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

9.8. Size:253K inchange semiconductor
aob11n60.pdf

isc N-Channel MOSFET Transistor AOB11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

9.9. Size:253K inchange semiconductor
aob11s65.pdf

isc N-Channel MOSFET Transistor AOB11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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