AOB11C60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB11C60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 50 nS
Cossⓘ - Capacitancia de salida: 84 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de AOB11C60 MOSFET
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AOB11C60 datasheet
..1. Size:470K aosemi
aob11c60.pdf 
AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET IDM 80A process that is designed to deliver high levels of RDS(ON),max
9.1. Size:579K aosemi
aot11s60l aob11s60l aotf11s60l aotf11s60.pdf
AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11
9.2. Size:292K aosemi
aob11s60l.pdf
AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin
9.3. Size:292K aosemi
aob11s60.pdf
AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin
9.4. Size:292K aosemi
aob1100l.pdf
AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 100V The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 130A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)
9.5. Size:444K aosemi
aob11n60.pdf
AOB11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOB11N60 has been fabricated using an advanced 700V@150 high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
9.6. Size:299K aosemi
aot11s65 aob11s65 aotf11s65.pdf
AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi
9.7. Size:300K aosemi
aob11s65l.pdf
AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi
9.8. Size:299K aosemi
aob11s65.pdf
AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi
9.9. Size:253K inchange semiconductor
aob11s60.pdf
isc N-Channel MOSFET Transistor AOB11S60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
9.10. Size:253K inchange semiconductor
aob1100l.pdf
isc N-Channel MOSFET Transistor AOB1100L FEATURES Drain Current I = 130A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu
9.11. Size:253K inchange semiconductor
aob11n60.pdf
isc N-Channel MOSFET Transistor AOB11N60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.12. Size:253K inchange semiconductor
aob11s65.pdf
isc N-Channel MOSFET Transistor AOB11S65 FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
Otros transistores... AO8820, AO8822, AO8830, AO9926B, AO9926C, AOB10N60, AOB10T60P, AOB1100L, MMIS60R580P, AOB11N60, AOB11S60, AOB11S65, AOB12N50, AOB12N60FD, AOB12T60P, AOB1404L, AOB14N50
