AOB14N50 Datasheet. Equivalente

 ..1. Size:258K  aosemi
 aob14n50.pdf

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 ..2. Size:253K  inchange semiconductor
 aob14n50.pdf

isc N-Channel MOSFET Transistor AOB14N50 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:425K  aosemi
 aob1404l.pdf

AOT1404L/AOB1404L 40V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 40V The AOT1404L/AOB1404L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 220A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 9.2. Size:425K  aosemi
 aot1404l aob1404l.pdf

AOT1404L/AOB1404L 40V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 40V The AOT1404L/AOB1404L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 220A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 9.3. Size:918K  cn vbsemi
 aob1404l.pdf

AOB1404L www.VBsemi.tw N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.005 at VGS = 10 V 100 40 53 nC 100 % Rg and UIS tested 0.006 at VGS = 4.5 V 98 Material categorization for definitions of compliance please see D TO-263 G S S S D D G G

 9.4. Size:253K  inchange semiconductor
 aob1404l.pdf

isc N-Channel MOSFET Transistor AOB1404L FEATURES Drain Current I = 220A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp