AOB256L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOB256L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 83 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 19 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.8 V
   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 61.5 pF
   Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET AOB256L

AOB256L Datasheet (PDF)

..1. Size:287K aosemi
aob256l.pdf

AOB256L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOB256L uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

..2. Size:253K inchange semiconductor
aob256l.pdf

isc N-Channel MOSFET Transistor AOB256LFEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.1. Size:636K aosemi
aot2502l aob2502l.pdf

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:312K aosemi
aob25s65l.pdf

AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi

9.3. Size:297K aosemi
aob2500l.pdf

AOT2500L/AOB2500L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

9.4. Size:306K aosemi
aob254l.pdf

AOT254L/AOB254L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOT254L/AOB254L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 32Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

9.5. Size:334K aosemi
aob2502l.pdf

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

9.6. Size:311K aosemi
aob25s65.pdf

9.7. Size:845K cn vbsemi
aob254l.pdf

AOB254Lwww.VBsemi.twN-Channel 150V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.035 at VGS = 10 V45150 New Low Thermal Resistance Package0.042 at VGS = 7.5 V42 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-263GG D STop

9.8. Size:252K inchange semiconductor
aob2500l.pdf

isc N-Channel MOSFET Transistor AOB2500LFEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

9.9. Size:253K inchange semiconductor
aob254l.pdf

isc N-Channel MOSFET Transistor AOB254LFEATURESDrain Current I = 32A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.10. Size:252K inchange semiconductor
aob2502l.pdf

isc N-Channel MOSFET Transistor AOB2502LFEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 10.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

9.11. Size:253K inchange semiconductor
aob25s65.pdf

isc N-Channel MOSFET Transistor AOB25S65FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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