AOB256L Todos los transistores

 ..1. Size:287K  aosemi
 aob256l.pdf

AOB256L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOB256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 19A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:253K  inchange semiconductor
 aob256l.pdf

isc N-Channel MOSFET Transistor AOB256L FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:397K  aosemi
 aot254l aob254l.pdf

AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 32A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.2. Size:636K  aosemi
 aot2502l aob2502l.pdf

AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:312K  aosemi
 aob25s65l.pdf

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 9.4. Size:297K  aosemi
 aob2500l.pdf

AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.5. Size:306K  aosemi
 aob254l.pdf

AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 32A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.6. Size:334K  aosemi
 aob2502l.pdf

AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

 9.7. Size:297K  aosemi
 aot2500l aob2500l.pdf

AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 9.8. Size:311K  aosemi
 aob25s65.pdf

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 9.9. Size:311K  aosemi
 aot25s65 aob25s65 aotf25s65.pdf

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

 9.10. Size:845K  cn vbsemi
 aob254l.pdf

AOB254L www.VBsemi.tw N-Channel 150V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.035 at VGS = 10 V 45 150 New Low Thermal Resistance Package 0.042 at VGS = 7.5 V 42 PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-263 G G D S Top

 9.11. Size:252K  inchange semiconductor
 aob2500l.pdf

isc N-Channel MOSFET Transistor AOB2500L FEATURES Drain Current I = 152A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 6.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.12. Size:253K  inchange semiconductor
 aob254l.pdf

isc N-Channel MOSFET Transistor AOB254L FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 46m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.13. Size:252K  inchange semiconductor
 aob2502l.pdf

isc N-Channel MOSFET Transistor AOB2502L FEATURES Drain Current I = 106A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 10.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.14. Size:253K  inchange semiconductor
 aob25s65.pdf

isc N-Channel MOSFET Transistor AOB25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp