AOB264L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB264L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 333 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7 nS
Cossⓘ - Capacitancia de salida: 840 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de AOB264L MOSFET
- Selecciónⓘ de transistores por parámetros
AOB264L datasheet
..1. Size:358K aosemi
aob264l aot264l.pdf 
AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
..2. Size:358K aosemi
aot264l aob264l.pdf
AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
..3. Size:238K inchange semiconductor
aob264l.pdf
isc N-Channel MOSFET Transistor AOB264L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera
9.1. Size:424K aosemi
aot2618l aob2618l aotf2618l.pdf
AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.2. Size:276K aosemi
aob260l.pdf
AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.3. Size:367K aosemi
aob2618l.pdf
AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.4. Size:420K aosemi
aot2606l aob2606l aotf2606l.pdf
AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.5. Size:289K aosemi
aob2608l.pdf
AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72A technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
9.6. Size:349K aosemi
aob2606l.pdf
AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.7. Size:405K aosemi
aob266l.pdf
AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.8. Size:414K aosemi
aot266l aob266l aotf266l.pdf
AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to ID (at VGS=10V) 140A/78A provide the most efficient high frequency switching RDS(ON) (at VGS=10V)
9.9. Size:402K aosemi
aot260l aob260l.pdf
AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.10. Size:333K aosemi
aob262l.pdf
AOT262L/AOB262L 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:257K inchange semiconductor
aob260l.pdf
Isc N-Channel MOSFET Transistor AOB260l FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.12. Size:238K inchange semiconductor
aob2618l.pdf
isc N-Channel MOSFET Transistor AOB2618L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 19m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener
9.13. Size:238K inchange semiconductor
aob2608l.pdf
isc N-Channel MOSFET Transistor AOB2608L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
9.14. Size:264K inchange semiconductor
aob2606l.pdf
sc N-Channel MOSFET Transistor AOB2606L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATING
9.15. Size:203K inchange semiconductor
aob266l.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOB266L FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.16. Size:238K inchange semiconductor
aob262l.pdf
isc N-Channel MOSFET Transistor AOB262L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
Otros transistores... AOB254L
, AOB256L
, AOB25S65
, AOB2606L
, AOB2608L
, AOB260L
, AOB2618L
, AOB262L
, 10N60
, AOB266L
, AOB270AL
, AOB27S60
, AOB280L
, AOB282L
, AOB284L
, AOB286L
, AOB288L
.
