AOB284L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB284L 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 105 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 673 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Encapsulados: TO-263
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AOB284L datasheet
..2. Size:378K aosemi
aob284l.pdf 
AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
..4. Size:238K inchange semiconductor
aob284l.pdf
isc N-Channel MOSFET Transistor AOB284L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 4.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
9.2. Size:269K aosemi
aot280l aob280l.pdf
AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.3. Size:269K aosemi
aob280l.pdf
AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.4. Size:363K aosemi
aob288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.6. Size:390K aosemi
aot286l aob286l.pdf
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.7. Size:488K aosemi
aotf280a60l aot280a60l aob280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
9.8. Size:488K aosemi
aob280a60l.pdf
AOTF280A60L/AOT280A60L/AOB280A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
9.9. Size:285K aosemi
aob286l.pdf
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.10. Size:363K aosemi
aot288l aob288l aotf288l.pdf
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.11. Size:238K inchange semiconductor
aob280l.pdf
isc N-Channel MOSFET Transistor AOB280L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 2.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
9.12. Size:238K inchange semiconductor
aob288l.pdf
isc N-Channel MOSFET Transistor AOB288L FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 8.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener
9.13. Size:238K inchange semiconductor
aob282l.pdf
isc N-Channel MOSFET Transistor AOB282L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
9.14. Size:239K inchange semiconductor
aob286l.pdf
isc N-Channel MOSFET Transistor AOB286L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 80V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener
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