AOB288L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOB288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 8.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

AOT284L/AOB284L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT284L & AOB284L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOT282L/AOB282L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT282L & AOB282L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOTF280A60L/AOT280A60L/AOB280A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

AOT284L/AOB284L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT284L & AOB284L uses trench MOSFET 80Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 105Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOT286L/AOB286L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOB280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

isc N-Channel MOSFET Transistor AOB282LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

isc N-Channel MOSFET Transistor AOB284LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

isc N-Channel MOSFET Transistor AOB286LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 5.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener