AOB480L Todos los transistores

 ..1. Size:406K  aosemi
 aob480l.pdf

AOT480L/AOB480L 80V N-Channel MOSFET TM SDMOS General Description Product Summary 80V The AOT480L & AOB480L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 180A gate charge & low Qrr. The result is outstanding efficiency RDS(ON) (at VGS=10V)

 ..2. Size:253K  inchange semiconductor
 aob480l.pdf

isc N-Channel MOSFET Transistor AOB480L FEATURES Drain Current I =180A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:270K  aosemi
 aob482.pdf

AOT482L/AOB482L 80V N-Channel MOSFET TM SDMOS General Description Product Summary 80V The AOT482L/AOB482L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

 9.2. Size:269K  aosemi
 aob482l.pdf

AOT482L/AOB482L 80V N-Channel MOSFET TM SDMOS General Description Product Summary 80V The AOT482L/AOB482L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

 9.3. Size:255K  inchange semiconductor
 aob482l.pdf

isc N-Channel MOSFET Transistor AOB482L FEATURES Drain Current I =105A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R = 6.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose