AOC2421 Todos los transistores

 ..1. Size:253K  aosemi
 aoc2421.pdf

AOC2421 8V P-Channel MOSFET General Description Product Summary VDS -8V The AOC2421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -2.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

 8.1. Size:240K  aosemi
 aoc2422.pdf

AOC2422 8V N-Channel MOSFET General Description Product Summary VDS 8V The AOC2422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 3.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

 8.2. Size:251K  aosemi
 aoc2423.pdf

AOC2423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.1. Size:260K  aosemi
 aoc2414.pdf

AOC2414 8V N-Channel MOSFET General Description Product Summary VDS 8V The AOC2414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

 9.2. Size:256K  aosemi
 aoc2413.pdf

AOC2413 8V P-Channel MOSFET General Description Product Summary VDS -8V The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

 9.3. Size:253K  aosemi
 aoc2417.pdf

AOC2417 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.4. Size:252K  aosemi
 aoc2415.pdf

AOC2415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5A with gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)

 9.5. Size:209K  aosemi
 aoc2403.pdf

AOC2403 20V P-Channel MOSFET General Description Product Summary Vds -20V ID (at VGS=-4.5V) -1.8A The AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

 9.6. Size:223K  aosemi
 aoc2412.pdf

AOC2412 20V N-Channel MOSFET General Description Product Summary VDS 20V The AOC2412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5A with gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V)

 9.7. Size:256K  aosemi
 aoc2401.pdf

AOC2401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOC2401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.8. Size:202K  aosemi
 aoc2411.pdf

AOC2411 30V P-Channel MOSFET General Description Product Summary Vds -30V ID (at VGS=-4.5V) -3.4A The AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)