AOC2423 Todos los transistores

 

AOC2423 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOC2423
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 92 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: ALPHADFN0.97X0.97A

 Búsqueda de reemplazo de MOSFET AOC2423

 

AOC2423 Datasheet (PDF)

 ..1. Size:251K  aosemi
aoc2423.pdf

AOC2423 AOC2423

AOC242320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2423 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 8.1. Size:240K  aosemi
aoc2422.pdf

AOC2423 AOC2423

AOC24228V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2422 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

 8.2. Size:253K  aosemi
aoc2421.pdf

AOC2423 AOC2423

AOC24218V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2421 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -2.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

 9.1. Size:260K  aosemi
aoc2414.pdf

AOC2423 AOC2423

AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

 9.2. Size:256K  aosemi
aoc2413.pdf

AOC2423 AOC2423

AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

 9.3. Size:253K  aosemi
aoc2417.pdf

AOC2423 AOC2423

AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.4. Size:252K  aosemi
aoc2415.pdf

AOC2423 AOC2423

AOC241520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2415 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5Awith gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)

 9.5. Size:209K  aosemi
aoc2403.pdf

AOC2423 AOC2423

AOC2403 20V P-Channel MOSFETGeneral Description Product SummaryVds -20V ID (at VGS=-4.5V) -1.8AThe AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

 9.6. Size:223K  aosemi
aoc2412.pdf

AOC2423 AOC2423

AOC241220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOC2412 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5Awith gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V)

 9.7. Size:256K  aosemi
aoc2401.pdf

AOC2423 AOC2423

AOC240130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOC2401 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

 9.8. Size:202K  aosemi
aoc2411.pdf

AOC2423 AOC2423

AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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