AOC2804 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOC2804 datasheet

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AOC2804 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

0.1. Size:353K aosemi
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AOC2804B 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

8.1. Size:244K aosemi
aoc2800.pdf pdf_icon

AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 30V The AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6A excellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)

8.2. Size:240K aosemi
aoc2802.pdf pdf_icon

AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 20V The AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6A excellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)