AOD2544 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD2544
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 78 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.054 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD2544

AOD2544 Datasheet (PDF)

..1. Size:285K aosemi
aod2544.pdf

AOD2544150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)

..2. Size:264K inchange semiconductor
aod2544.pdf

isc N-Channel MOSFET Transistor AOD2544FEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 54m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.1. Size:363K aosemi
aod254.pdf

AOD254150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD254 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

8.2. Size:223K inchange semiconductor
aod254.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD254FEATURESStatic drain-source on-resistance:RDS(on)46m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-S

9.1. Size:302K aosemi
aod256.pdf

AOD256150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD256 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.2. Size:263K inchange semiconductor
aod256.pdf

isc N-Channel MOSFET Transistor AOD256FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: