AOD2544 Todos los transistores

 ..1. Size:285K  aosemi
 aod2544.pdf

 ..2. Size:264K  inchange semiconductor
 aod2544.pdf

isc N-Channel MOSFET Transistor AOD2544 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Static Drain-Source On-Resistance R = 54m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.1. Size:363K  aosemi
 aod254.pdf

AOD254 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOD254 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 30A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.2. Size:223K  inchange semiconductor
 aod254.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD254 FEATURES Static drain-source on-resistance RDS(on) 46m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gate-S

 9.1. Size:302K  aosemi
 aod256.pdf

AOD256 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOD256 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 19A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.2. Size:263K  inchange semiconductor
 aod256.pdf

isc N-Channel MOSFET Transistor AOD256 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose