AOD2908 Todos los transistores

 ..1. Size:267K  aosemi
 aod2908.pdf

AOD2908 100V N-Channel MOSFET General Description Product Summary VDS The AOD2908 uses Trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 52A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:208K  inchange semiconductor
 aod2908.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2908 FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply LED backlighting Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.1. Size:260K  aosemi
 aod2904.pdf

AOD2904 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:242K  inchange semiconductor
 aod2904.pdf

isc N-Channel MOSFET Transistor AOD2904 FEATURES Static drain-source on-resistance RDS(on) 10m @10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.1. Size:293K  aosemi
 aod2916.pdf

AOD2916 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD2916 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 25A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.2. Size:372K  aosemi
 aod2910e.pdf

AOD2910E 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:612K  aosemi
 aod296a aoi296a.pdf

AOD296A/AOI296A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.4. Size:364K  aosemi
 aod296a.pdf

AOD296A/AOI296A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.5. Size:600K  aosemi
 aod294a aoi294a.pdf

AOD294A/AOI294A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 55A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.6. Size:374K  aosemi
 aod294a.pdf

AOD294A/AOI294A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 55A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.7. Size:287K  aosemi
 aod2922.pdf

AOD2922 100V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 7A Low Gate Charge RDS(ON) (at VGS=10V)

 9.8. Size:311K  aosemi
 aod2910.pdf

AOD2910 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 31A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 9.9. Size:265K  inchange semiconductor
 aod2916.pdf

isc N-Channel MOSFET Transistor AOD2916 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =34m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.10. Size:211K  inchange semiconductor
 aod2910e.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2910E FEATURES With TO-252( DPAK ) packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Industrial and motor drive applications DC/DC and AC/DC conver

 9.11. Size:249K  inchange semiconductor
 aod296a.pdf

isc N-Channel MOSFET Transistor AOD296A FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 8.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.12. Size:265K  inchange semiconductor
 aod294a.pdf

isc N-Channel MOSFET Transistor AOD294A FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.13. Size:261K  inchange semiconductor
 aod2922.pdf

Isc N-Channel MOSFET Transistor AOD2922 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

 9.14. Size:249K  inchange semiconductor
 aod2910.pdf

isc N-Channel MOSFET Transistor AOD2910 FEATURES Drain Current I = 31A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener