AOD3N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD3N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 9.9 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 31.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD3N60

AOD3N60 Datasheet (PDF)

..1. Size:276K aosemi
aod3n60.pdf

AOD3N60/AOU3N60600V,2.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N60 & AOU3N60 have been fabricated usingan advanced high voltage MOSFET process that is VDS 700V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.5Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

..2. Size:265K inchange semiconductor
aod3n60.pdf

isc N-Channel MOSFET Transistor AOD3N60FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =3.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:389K aosemi
aod3n40.pdf

AOD3N40400V,2.6A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N40 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 500V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.6ADC applications. RDS(ON) (at VGS=10V)

9.2. Size:273K aosemi
aod3n50.pdf

AOD3N50/AOU3N50500V, 3A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N50 & AOU3N50 have been fabricated usingan advanced high voltage MOSFET process that isVDS 600V@150designed to deliver high levels of performance and ID (at VGS=10V) 2.8Arobustness in popular AC-DC applications. RDS(ON) (at VGS=10V)

9.3. Size:339K aosemi
aod3n80.pdf

AOD3N80800V,2.8A N-Channel MOSFETGeneral Description Product SummaryThe AOD3N80 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 900V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2.8ADC applications. RDS(ON) (at VGS=10V)

9.4. Size:701K aosemi
aod3n50 aou3n50.pdf

9.5. Size:265K inchange semiconductor
aod3n40.pdf

isc N-Channel MOSFET Transistor AOD3N40FEATURESDrain Current I = 2.6A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =3.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.6. Size:265K inchange semiconductor
aod3n50.pdf

isc N-Channel MOSFET Transistor AOD3N50FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.7. Size:208K inchange semiconductor
aod3n80.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD3N80FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

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