AOD4120 Todos los transistores

 ..1. Size:173K  aosemi
 aod4120.pdf

AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and VDS (V) = 20V design to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 ..2. Size:265K  inchange semiconductor
 aod4120.pdf

isc N-Channel MOSFET Transistor AOD4120 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =20V(Min) DSS Static Drain-Source On-Resistance R =18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 8.1. Size:457K  aosemi
 aod4126.pdf

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 8.2. Size:144K  aosemi
 aod4128.pdf

AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. VDS (V) = 25V This device is ideally suited for use as a low side switch in ID = 60 A (VGS = 10V) CPU core power conversion. The device can also be used RDS(ON)

 8.3. Size:263K  aosemi
 aod4124.pdf

AOD4124 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOD4124 is fabricated with SDMOSTM trench 54A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate

 8.4. Size:457K  aosemi
 aod4126 aoi4126.pdf

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 8.5. Size:265K  inchange semiconductor
 aod4126.pdf

isc N-Channel MOSFET Transistor AOD4126 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.6. Size:265K  inchange semiconductor
 aod4128.pdf

isc N-Channel MOSFET Transistor AOD4128 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =25V(Min) DSS Static Drain-Source On-Resistance R =4.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.7. Size:208K  inchange semiconductor
 aod4124.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD4124 FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Load switching General purpose applications Switching applications ABSOLUTE MAXIMUM RATINGS(T =