AOD4130 Todos los transistores

 ..1. Size:479K  aosemi
 aod4130 aoi4130.pdf

AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 30A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..2. Size:304K  aosemi
 aod4130.pdf

AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 30A provide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..3. Size:771K  cn vbsemi
 aod4130.pdf

AOD4130 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

 ..4. Size:208K  inchange semiconductor
 aod4130.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOD4130 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:207K  aosemi
 aod413a.pdf

AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and VDS (V) = -40V design to provide excellent RDS(ON) with low gate ID = -12A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON)

 8.2. Size:449K  aosemi
 aod4132.pdf

AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4132 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON)

 8.3. Size:152K  aosemi
 aod4136.pdf

AOD4136 N-Channel SDMOSTM POWER Transistor General Description Features VDS (V) = 25V The AOD4136 is fabricated with SDMOSTM trench ID = 25A (VGS = 10V) technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with RDS(ON)

 8.4. Size:689K  cn wxdh
 aob413 aod413.pdf

AOB413/AOD413 30A 40V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -40V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R = 30m DS(on) (TYP) RoHS standard. I = -30A D 2 Features Fast switching Low on resistance Low gate charge Low reverse tr

 8.5. Size:1382K  kexin
 aod413.pdf

SMD Type MOSFET P-Channel MOSFET AOD413 (KOD413) TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-40V ID =-12 A (VGS =-10V) RDS(ON) 45m (VGS =-10V) 0.127 0.80+0.1 max -0.1 RDS(ON) 69m (VGS =-4.5V) 1 Gate 2 Drain 2.3 0.60+ 0.1 - 0.1 3 Source +0.15 4.60 -0.15 4 Drain D G S Absol

 8.6. Size:838K  cn vbsemi
 aod4132.pdf

AOD4132 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOL

 8.7. Size:265K  inchange semiconductor
 aod413a.pdf

isc P-Channel MOSFET Transistor AOD413A FEATURES Drain Current I = -12A@ T =25 D C Drain Source Voltage- V =-40V(Min) DSS Static Drain-Source On-Resistance R =11m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.8. Size:265K  inchange semiconductor
 aod4132.pdf

isc N-Channel MOSFET Transistor AOD4132 FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R =4.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.9. Size:265K  inchange semiconductor
 aod4136.pdf

isc N-Channel MOSFET Transistor AOD4136 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =25V(Min) DSS Static Drain-Source On-Resistance R =11m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a