AOD4180 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD418080V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS80VThe AOD4180 is fabricated with SDMOSTM trench 54A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

AOD4180www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V 75a80 0.0088 at VGS = 6.0 V 65a 17.1 nCAPPLICATIONS0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous RectificationTO-252D DC/AC Inverters LED Backlightin

isc N-Channel MOSFET Transistor AOD4180FEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)

AOD4189P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4189 uses advanced trench technology and VDS (V) = -40Vdesign to provide excellent RDS(ON) with low gateID = -40A (VGS = -10V)charge. With the excellent thermal resistance of theRDS(ON)

AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)

AOD4184/AOI418440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184/AOI4184 used advanced trench technology 40V50Aand design to provide excellent RDS(ON) with low gate ID (at VGS=10V)charge. With the excellent thermal resistance of the DPAK

AOD4187P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4187 uses advanced trench technology and VDS (V) = -40Vdesign to provide excellent RDS(ON) with low gate charge.ID = -45A (VGS = -10V)With the excellent thermal resistance of the DPAKRDS(ON)

AOD4184A40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD4184A combines advanced trench MOSFET 40V50Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is well suited for high

AOD418280V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AOD4182 is fabricated with SDMOSTM trench ID (at VGS=10V)53Atechnology that combines excellent RDS(ON) with low gate

AOD4186N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide VDS (V) =40Vextremely low RDS(ON). This device is ideal for low (VGS = 10V)ID = 35Avoltage inverter applications.(VGS = 10V)RDS(ON)

AOD418/AOI41830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD418/AOI418 uses advanced trench technology to 30V36Aprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V)resistance. With the excellent thermal resistance of the

AOD4189www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

AOD4185www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle

AOD4184www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RATI

isc P-Channel MOSFET Transistor AOD4189FEATURESDrain Current I = -40A@ T =25D CDrain Source Voltage-: V =-40V(Min)DSSStatic Drain-Source On-Resistance: R =22m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc P-Channel MOSFET Transistor AOD4185FEATURESDrain Current I = -40A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R =15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor AOD4184FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral

isc N-Channel MOSFET Transistor AOD4184AFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

isc N-Channel MOSFET Transistor AOD4182FEATURESDrain Current I = 53A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R =15.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOD4186FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc N-Channel MOSFET Transistor AOD418FEATURESDrain Current I = 36A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera