AOD422 Todos los transistores

 ..1. Size:422K  aosemi
 aod422.pdf

AOD422 20V N-Channel MOSFET General Description Product Summary VDS 20V The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 20A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)

 ..2. Size:895K  cn vbsemi
 aod422.pdf

AOD422 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLUT

 ..3. Size:265K  inchange semiconductor
 aod422.pdf

isc N-Channel MOSFET Transistor AOD422 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 20V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:318K  aosemi
 aod4286.pdf

AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 14A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.2. Size:133K  aosemi
 aod421.pdf

AOD421 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD421 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -12.5 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON)

 9.3. Size:566K  aosemi
 aod420.pdf

AOD420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD420 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 10A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 9.4. Size:374K  aosemi
 aod423.pdf

AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

 9.5. Size:418K  aosemi
 aod424g.pdf

AOD424G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 9.6. Size:318K  aosemi
 aod4286 aoi4286.pdf

AOD4286/AOI4286 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD4286, AOI4286 uses trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 14A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 9.7. Size:452K  aosemi
 aod424.pdf

AOD424 20V N-Channel MOSFET General Description Product Summary VDS 20V The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 45A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.8. Size:459K  aosemi
 aod423 aoi423 aoy423.pdf

AOD423/AOI423/AOY423 TM 30V P-Channel AlphaSGT General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

 9.9. Size:252K  aosemi
 aod425.pdf

AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30V with a 25V gate rating. This device is suitable for use ID = -50A (VGS = -10V) as a load switch or in PWM applications. The device is RDS(ON)

 9.10. Size:846K  cn vbsemi
 aod425.pdf

AOD425 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET ABSO

 9.11. Size:223K  inchange semiconductor
 aod4286.pdf

Isc N-Channel MOSFET Transistor AOD4286 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

 9.12. Size:265K  inchange semiconductor
 aod421.pdf

isc P-Channel MOSFET Transistor AOD421 FEATURES Drain Current I = -12.5A@ T =25 D C Drain Source Voltage- V = -20V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.13. Size:207K  inchange semiconductor
 aod423.pdf

INCHANGE Semiconductor isc P-Channel MOSFET Transistor AOD423 FEATURES With TO-252( DPAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RA

 9.14. Size:265K  inchange semiconductor
 aod424g.pdf

isc N-Channel MOSFET Transistor AOD424G FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =20V(Min) DSS Static Drain-Source On-Resistance R = 4.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.15. Size:264K  inchange semiconductor
 aod424.pdf

isc N-Channel MOSFET Transistor AOD424 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage- V =20V(Min) DSS Static Drain-Source On-Resistance R = 4.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.16. Size:264K  inchange semiconductor
 aod425.pdf

isc P-Channel MOSFET Transistor AOD425 FEATURES Drain Current I = -50A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos