AOD442 Todos los transistores

 ..1. Size:246K  aosemi
 aod442 aoi442.pdf

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary VDS The AOD442/AOI442 used advanced trench technology to 60V 37A provide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V) devices are suitable for use as a load switch or in PWM

 ..2. Size:246K  aosemi
 aod442.pdf

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary VDS The AOD442/AOI442 used advanced trench technology to 60V 37A provide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V) devices are suitable for use as a load switch or in PWM

 ..3. Size:249K  inchange semiconductor
 aod442.pdf

isc N-Channel MOSFET Transistor AOD442 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general

 0.1. Size:349K  aosemi
 aod442g.pdf

AOD442G 60V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 40A Logic Level Driving RDS(ON) (at VGS=10V)

 0.2. Size:249K  inchange semiconductor
 aod442g.pdf

isc N-Channel MOSFET Transistor AOD442G FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

 9.1. Size:291K  aosemi
 aod4454.pdf

AOD4454 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 20A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.2. Size:193K  aosemi
 aod448.pdf

AOD448 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD448 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 75A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.3. Size:248K  aosemi
 aod444.pdf

AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary VDS The AOD444/AOI444 combine advanced trench MOSFET 60V 12A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). Those devices are suitable for use

 9.4. Size:248K  aosemi
 aod444 aoi444.pdf

AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary VDS The AOD444/AOI444 combine advanced trench MOSFET 60V 12A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). Those devices are suitable for use

 9.5. Size:193K  aosemi
 aod446.pdf

AOD446 N-Channel Enhancement Mode Field Effect Transistor General Description Features VDS (V) = 75V The AOD446 uses advanced trench technology and ID = 10 A (VGS = 20V) design to provide excellent RDS(ON) with low gate RDS(ON)

 9.6. Size:1741K  kexin
 aod444.pdf

SMD Type MOSFET N-Channel MOSFET AOD444 (KOD444) TO-252 Unit mm +0.15 Features 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) D 0.127 RDS(ON) 85m (VGS = 4.5V) +0.1 0.80-0.1 max + 0.1 2.3 0.60- 0.1 +0.15 4.60 -0.15 G S Absolute Maximum Ratings Ta = 25 Parame

 9.7. Size:847K  cn vbsemi
 aod444.pdf

AOD444 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor D

 9.8. Size:266K  inchange semiconductor
 aod4454.pdf

isc N-Channel MOSFET Transistor AOD4454 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Static Drain-Source On-Resistance R =94m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.9. Size:265K  inchange semiconductor
 aod444.pdf

isc N-Channel MOSFET Transistor AOD444 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.10. Size:265K  inchange semiconductor
 aod446.pdf

isc N-Channel MOSFET Transistor AOD446 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose