AOD450 Todos los transistores

 ..1. Size:242K  aosemi
 aod450.pdf

AOD450 200V N-Channel MOSFET General Description Product Summary VDS 200V The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 3.8A This device is suitable for use in inverter, load switching RDS(ON) (at VGS=10V)

 ..2. Size:265K  inchange semiconductor
 aod450.pdf

isc N-Channel MOSFET Transistor AOD450 FEATURES Drain Current I = 3.8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 0.1. Size:683K  aosemi
 aod450a70 aoi450a70.pdf

AOD450A70/AOI450A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 0.2. Size:285K  aosemi
 aod4504.pdf

AOD4504 200V N-Channel MOSFET General Description Product Summary VDS 200V The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 6A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 0.3. Size:683K  aosemi
 aod450a70.pdf

AOD450A70/AOI450A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 0.4. Size:265K  inchange semiconductor
 aod4504.pdf

isc N-Channel MOSFET Transistor AOD4504 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a