AOD456 Todos los transistores

 ..1. Size:193K  aosemi
 aod456.pdf

AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD456 uses advanced trench technology and VDS (V) = 25V design to provide excellent RDS(ON) with low gate ID = 50A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 ..2. Size:1361K  cn vbsemi
 aod456.pdf

AOD456 www.VBsemi.tw N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 65 20 20 0.008 @ VGS = 2.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet

 ..3. Size:265K  inchange semiconductor
 aod456.pdf

isc N-Channel MOSFET Transistor AOD456 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 25V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 0.1. Size:193K  aosemi
 aod456a.pdf

AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD456 uses advanced trench technology and VDS (V) = 25V design to provide excellent RDS(ON) with low gate ID = 50A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.1. Size:200K  aosemi
 aod454.pdf

AOD454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454 uses advanced trench technology and VDS (V) = 40V design to provide excellent RDS(ON) with low gate ID = 12 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.2. Size:683K  aosemi
 aod450a70 aoi450a70.pdf

AOD450A70/AOI450A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 9.3. Size:153K  aosemi
 aod452a.pdf

AOD452A N-Channel SDMOSTM POWER Transistor General Description Features VDS (V) = 25V The AOD452A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V) technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON)

 9.4. Size:242K  aosemi
 aod450.pdf

AOD450 200V N-Channel MOSFET General Description Product Summary VDS 200V The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 3.8A This device is suitable for use in inverter, load switching RDS(ON) (at VGS=10V)

 9.5. Size:261K  aosemi
 aod458.pdf

AOD458 250V,14A N-Channel MOSFET General Description Product Summary The AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high 300V@150 VDS levels of performance and robustness in popular AC-DC 14A ID (at VGS=10V) applications.By providing low RDS(on), Ciss and Crss along

 9.6. Size:285K  aosemi
 aod4504.pdf

AOD4504 200V N-Channel MOSFET General Description Product Summary VDS 200V The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 6A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

 9.7. Size:683K  aosemi
 aod450a70.pdf

AOD450A70/AOI450A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max

 9.8. Size:193K  aosemi
 aod454a.pdf

AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454A uses advanced trench technology and VDS (V) = 40V design to provide excellent RDS(ON) with low gate ID = 20A (VGS = 10V) charge. With the excellent thermal resistance of the RDS(ON)

 9.9. Size:265K  inchange semiconductor
 aod450.pdf

isc N-Channel MOSFET Transistor AOD450 FEATURES Drain Current I = 3.8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.10. Size:265K  inchange semiconductor
 aod458.pdf

isc N-Channel MOSFET Transistor AOD458 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.11. Size:265K  inchange semiconductor
 aod4504.pdf

isc N-Channel MOSFET Transistor AOD4504 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.12. Size:265K  inchange semiconductor
 aod454a.pdf

isc N-Channel MOSFET Transistor AOD454A FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R =30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a