AOD464 Todos los transistores

 ..1. Size:147K  aosemi
 aod464.pdf

AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD464 uses advanced trench technology and VDS (V) = 105V design to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V) charge. This device is suitable for use in high voltage RDS(ON)

 ..2. Size:1760K  kexin
 aod464.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET AOD464 (KOD464) TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) =105V ID = 40A (VGS = 10V) 4 RDS(ON) 28m (VGS = 10V) @20A RDS(ON) 31m (VGS = 6V) 0.127 0.80+0.1 max -0.1 1 Gate + 0.1 2.3 0.60- 0.1 2 Drain +0.15 3 Source 4.60 -0.15 4 Drain

 ..3. Size:860K  cn vbsemi
 aod464.pdf

AOD464 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

 ..4. Size:265K  inchange semiconductor
 aod464.pdf

isc N-Channel MOSFET Transistor AOD464 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 105V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:306K  aosemi
 aod468.pdf

AOD468/AOI468 300V,11.5A N-Channel MOSFET General Description Product Summary The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDS to deliver high levels of performance and robustness in 11.5A ID (at VGS=10V) popular AC-DC applications.By providing low RDS(on), Ciss

 9.2. Size:152K  aosemi
 aod466.pdf

AOD466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD466 uses advanced trench technology and VDS (V) = 25V design to provide excellent RDS(ON) with low gate ID = 30A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.3. Size:509K  aosemi
 aod460.pdf

AOD460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD460 uses advanced trench technology and VDS (V) = 25V design to provide excellent RDS(ON) with low gate ID = 25 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.4. Size:306K  aosemi
 aod468 aoi468.pdf

AOD468/AOI468 300V,11.5A N-Channel MOSFET General Description Product Summary The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDS to deliver high levels of performance and robustness in 11.5A ID (at VGS=10V) popular AC-DC applications.By providing low RDS(on), Ciss

 9.5. Size:266K  inchange semiconductor
 aod468.pdf

isc N-Channel MOSFET Transistor AOD468 FEATURES Drain Current I = 11.5A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp