AOD492 Todos los transistores

 ..1. Size:156K  aosemi
 aod492.pdf

AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOD492 uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to ID =85A (VGS = 10V) provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, RDS(ON)

 ..2. Size:838K  cn vbsemi
 aod492.pdf

AOD492 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOLU

 ..3. Size:265K  inchange semiconductor
 aod492.pdf

isc N-Channel MOSFET Transistor AOD492 FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 4.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:490K  aosemi
 aod496a.pdf

AOD496A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOD496A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 57A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.2. Size:160K  aosemi
 aod490.pdf

AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide VDS (V) = 30V excellent RDS(ON),and low gate charge. This device is ID =40A (VGS = 10V) suitable for use as a low side FET in SMPS, load RDS(ON)

 9.3. Size:287K  aosemi
 aod498.pdf

AOD498 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD498 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 11A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.4. Size:141K  aosemi
 aod496.pdf

AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD496 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30V is suitable for use as a high side switch in SMPS and ID = 62A (VGS = 10V) general purpose applications. RDS(ON)

 9.5. Size:265K  inchange semiconductor
 aod496a.pdf

isc N-Channel MOSFET Transistor AOD496A FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 9.6. Size:265K  inchange semiconductor
 aod498.pdf

isc N-Channel MOSFET Transistor AOD498 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 140m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.7. Size:317K  inchange semiconductor
 aod496.pdf

isc N-Channel MOSFET Transistor AOD496 FEATURES Static drain-source on-resistance RDS(on) 9.5m 100% avalanche tested Minimum Lot-to-Lot variations for robust device 2 1 3 performance and reliable operation APPLICATIONS Be suitable for use as a high side switch in SMPS and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE