AOD496A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD496A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AOD496A

AOD496A Datasheet (PDF)

..1. Size:490K aosemi
aod496a.pdf

AOD496A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD496A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 57AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

..2. Size:265K inchange semiconductor
aod496a.pdf

isc N-Channel MOSFET Transistor AOD496AFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

8.1. Size:141K aosemi
aod496.pdf

AOD496N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD496 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 62A (VGS = 10V)general purpose applications.RDS(ON)

8.2. Size:317K inchange semiconductor
aod496.pdf

isc N-Channel MOSFET Transistor AOD496FEATURESStatic drain-source on-resistance:RDS(on)9.5m100% avalanche testedMinimum Lot-to-Lot variations for robust device213performance and reliable operationAPPLICATIONSBe suitable for use as a high side switch in SMPS andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

9.1. Size:156K aosemi
aod492.pdf

AOD492N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesTMSRFET AOD492 uses advanced trench technologyVDS (V) = 30Vwith a monolithically integrated Schottky diode toID =85A (VGS = 10V)provide excellent RDS(ON),and low gate charge. Thisdevice is suitable for use as a low side FET in SMPS, RDS(ON)

9.2. Size:160K aosemi
aod490.pdf

AOD490N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesThe AOD490 uses advanced trench technology with amonolithically integrated Schottky diode to provide VDS (V) = 30Vexcellent RDS(ON),and low gate charge. This device isID =40A (VGS = 10V)suitable for use as a low side FET in SMPS, loadRDS(ON)

9.3. Size:287K aosemi
aod498.pdf

AOD498100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD498 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 11Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.4. Size:838K cn vbsemi
aod492.pdf

AOD492www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU

9.5. Size:265K inchange semiconductor
aod492.pdf

isc N-Channel MOSFET Transistor AOD492FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.6. Size:265K inchange semiconductor
aod498.pdf

isc N-Channel MOSFET Transistor AOD498FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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