AOD510 Todos los transistores

 ..1. Size:511K  aosemi
 aod510 aoi510.pdf

AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:310K  aosemi
 aod510.pdf

AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 ..3. Size:265K  inchange semiconductor
 aod510.pdf

isc N-Channel MOSFET Transistor AOD510 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.1. Size:312K  aosemi
 aod518.pdf

AOD518/AOI518 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 54A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:333K  aosemi
 aod514.pdf

AOD514/AOI514/AOY514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:326K  aosemi
 aod516.pdf

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:306K  aosemi
 aod512.pdf

AOD512 30V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge

 9.5. Size:326K  aosemi
 aod516 aoi516 aoy516.pdf

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:843K  cn vbsemi
 aod518.pdf

AOD518 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOLUTE

 9.7. Size:278K  inchange semiconductor
 aod514.pdf

isc N-Channel MOSFET Transistor AOD514 FEATURES Static drain-source on-resistance RDS(on) 5.9m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr

 9.8. Size:262K  inchange semiconductor
 aod516.pdf

Isc N-Channel MOSFET Transistor AOD516 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage