AOD7S60 Todos los transistores

 ..1. Size:289K  aosemi
 aod7s60.pdf

AOD7S60/AOU7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD7S60 & AOU7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS

 ..2. Size:289K  aosemi
 aod7s60 aou7s60.pdf

AOD7S60/AOU7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD7S60 & AOU7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS

 ..3. Size:266K  inchange semiconductor
 aod7s60.pdf

isc N-Channel MOSFET Transistor AOD7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 8.1. Size:358K  aosemi
 aod7s65.pdf

AOD7S65/AOU7S65/AOI7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low RD

 8.2. Size:358K  aosemi
 aod7s65 aou7s65 aoi7s65.pdf

AOD7S65/AOU7S65/AOI7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low RD

 8.3. Size:266K  inchange semiconductor
 aod7s65.pdf

isc N-Channel MOSFET Transistor AOD7S65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos