AOD9N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD9N40 Datasheet (PDF)

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AOD9N40400V,8A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high 500V@150 VDSlevels of performance and robustness in popular AC-DC ID (at VGS=10V) 8Aapplications.By providing low RDS(on), Ciss and Crss along

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isc N-Channel MOSFET Transistor AOD9N40FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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AOD9N50/AOI9N50500V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N50 & AOI9N50 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 600V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 9Apopular AC-DC applications. RDS(ON) (at VGS=10V)

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AOD9N52520V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N52 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver VDS 620V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 9ADC applications. RDS(ON) (at VGS=10V)