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HAF1002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAF1002

Tipo de FET: FET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 16 V

Corriente continua de drenaje |Id|: 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: DPAK

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HAF1002 Datasheet (PDF)

0.1. haf1002l haf1002s.pdf Size:200K _renesas

HAF1002
HAF1002

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. haf1004l haf1004s.pdf Size:75K _hitachi

HAF1002
HAF1002

HAF1004(L), HAF1004(S)Silicon P Channel MOS FET SeriesPower SwitchingADE-208-629B (Z)3rd. EditionMay 2002DescriptionThis FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temp

8.2. haf1003l haf1003s.pdf Size:56K _hitachi

HAF1002
HAF1002

HAF1003(L), HAF1003(S)Silicon P Channel MOS FET Series Power SwitchingADE-208-626B (Z)3rd. EditionJuly 2000This FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temperature lik

Otros transistores... GFP70N03 , H5N2001LD , H5N2001LS , H5N2503P , H5N5004PL , H5N5005PL , H7N0302LS , HAF1001 , TPC8107 , HAF1003 , HAF1004 , HAF1005 , HAF2001 , HAF2002 , HAF2005 , HAF2007 , HAF2008 .

 

 
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