AOI2N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOI2N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 9.5 nC
   trⓘ - Tiempo de subida: 14.3 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
   Paquete / Cubierta: TO-251A

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AOI2N60 Datasheet (PDF)

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aoi2n60.pdf

AOI2N60600V, 2A N-Channel MOSFETGeneral Description Product SummaryThe AOI2N60 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliverVDS 700V@150high levels of performance and robustness in popular AC- ID (at VGS=10V) 2ADC applications. RDS(ON) (at VGS=10V)

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aoi2n60.pdf

isc N-Channel MOSFET Transistor AOI2N60FEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

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aoi2n60a.pdf

AOD2N60A/AOI2N60A/AOU2N60A600V,2A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Advanced High Voltage MOSFET technology Low RDS(ON) ID (at VGS=10V) 2A Low Ciss and Crss RDS(ON) (at VGS=10V)

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aoi2n60a.pdf

isc N-Channel MOSFET Transistor AOI2N60AFEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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