AOI4102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOI4102
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 21 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 Vtrⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Paquete / Cubierta: TO-251A
Búsqueda de reemplazo de MOSFET AOI4102
AOI4102 Datasheet (PDF)
aoi4102.pdf
AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)
aoi4102.pdf
isc N-Channel MOSFET Transistor AOI4102FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod4185 aoi4185.pdf
AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)
aod4130 aoi4130.pdf
AOD4130/AOI413060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOD4130/AOI4130 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 30Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aoi4185.pdf
AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)
aoi4184.pdf
AOD4184/AOI418440V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOD4184/AOI4184 used advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50Alow gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)
aoi4146.pdf
AOD4146/AOI414630V N-Channel MOSFETTMSDMOSGeneral Description Product Summary30VThe AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55Atrench technology that combines excellent RDS(ON) with lowgate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aoi4126.pdf
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aod4126 aoi4126.pdf
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
aoi418.pdf
AOD418/AOI41830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD418/AOI418 uses advanced trench technology to 30V36Aprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V)resistance. With the excellent thermal resistance of the
aoi4130.pdf
AOD4130/AOI413060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOD4130/AOI4130 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 30Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aoi4185.pdf
isc P-Channel MOSFET Transistor AOI4185FEATURESDrain Current I = -40A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R =15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aoi4184.pdf
isc N-Channel MOSFET Transistor AOI4184FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral
aoi4146.pdf
isc N-Channel MOSFET Transistor AOI4146FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aoi4126.pdf
isc N-Channel MOSFET Transistor AOI4126FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aoi418.pdf
isc N-Channel MOSFET Transistor AOI418FEATURESDrain Current I = 36A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
aoi4130.pdf
Isc N-Channel MOSFET Transistor AOI4130FEATURESWith TO-251(IPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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